nbxsba007 ON Semiconductor, nbxsba007 Datasheet - Page 3

• Manufacturer Part Number: nbxsba007
• Description: 3.3 V, 240.00 Mhz Lvpecl Clock Oscillator
• Manufacturer: ON Semiconductor

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
2. Measurement taken with outputs terminated with 50 W to V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
3. Measurement taken with outputs terminated with 50 W to V
4. Parameter guarantee 10 years aging. Includes initial stability at 25°C, shock, vibration, and first year aging.
Table 5. DC CHARACTERISTICS
Table 6. AC CHARACTERISTICS
t
DUTY_CYCLE
Symbol
Symbol
f
V
F
CLKOUT
t
t
OE/OD
OUTPP
V
t
t
V
NOISE
jit
I
V
V
jitter
start
I
DD
I
Df
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
t
t
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
IH
OH
(F)
IL
OL
R
IH
F
IL
Power Supply Current
OE Input HIGH Voltage
OE Input LOW Voltage
Input HIGH Current
Input LOW Current
Output HIGH Voltage
Output LOW Voltage
Output Voltage Amplitude
Output Clock Frequency
Frequency Stability
Phase−Noise Performance
f
(See Figure 3)
RMS Phase Jitter
Cycle to Cycle, RMS
Cycle to Cycle, Peak−to−Peak
Period, RMS
Period, Peak−to−Peak
Output Enable/Disable Time
Output Clock Duty Cycle
(Measured at Cross Point)
Output Rise Time (20% and 80%)
Output Fall Time (80% and 20%)
Start−up Time
Aging
CLKout
= 240.00 MHz
Characteristic
Characteristic
(V
(V
DD
DD
= 3.3 V ± 10%, GND = 0 V, T
= 3.3 V ± 10%, GND = 0 V, T
FSEL
FSEL
OE
OE
Every Year After 1
http://onsemi.com
100 kHz of Carrier
10 MHz of Carrier
12 kHz to 20 MHz
100 Hz of Carrier
10 kHz of Carrier
1 MHz of Carrier
1 kHz of Carrier
10,000 Cycles
10,000 Cycles
DD
1000 Cycles
1000 Cycles
DD
Conditions
V
V
Conditions
DD
DD
(Note 4)
1
− 2.0 V. See Figure 4.
− 2.0 V. See Figure 4.
st
= 3.3 V
= 3.3 V
Year
3
A
A
= −40°C to +85°C) (Note 2)
= −40°C to +85°C) (Note 3)
st
GND − 300
V
V
DD
DD
2000
−100
−100
−100
−100
2105
1355
Min.
Min.
48
−1945
−1195
240.00
−109
−125
−132
−132
−141
−161
Typ.
Typ.
680
250
250
0.4
1.5
75
15
10
50
1
1
V
V
DD
DD
Max.
+100
+100
+100
+100
2355
1700
Max.
V
100
800
±50
200
400
400
0.9
30
20
52
−1600
8
4
5
3
1
DD
−945
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
Units
Units
MHz
ppm
ppm
ppm
mA
mV
mV
mV
mV
mV
ms
mA
mA
ps
ps
ps
ps
ps
ns
ps
ps
%