nbsg111 ON Semiconductor, nbsg111 Datasheet - Page 5

• Manufacturer Part Number: nbsg111
• Description: 2.5v/3.3v Sige Differential 1 10 Clock/data Driver With Rsecl Outputs
• Manufacturer: ON Semiconductor

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
4. JEDEC standard 51−6, multilayer board − 2S2P (2 signal, 2 power).
Table 5. MAXIMUM RATINGS
V
V
V
V
I
I
I
I
T
T
q
q
T
Symbol
OUT
IN
BB
MM
A
stg
JA
JC
sol
CC
I
EE
INPP
Positive Power Supply
Positive Input
Negative Input
Negative Power Supply
Differential Input Voltage |CLK − CLK|
Output Current
Input Current Through R
V
V
Operating Temperature Range
Storage Temperature Range
Thermal Resistance (Junction−to−Ambient)
(Note 4)
Thermal Resistance (Junction−to−Case)
Wave Solder
BB
MM
Sink/Source
Sink/Source
3. For additional information, see Application Note AND8003/D.
Table 4. ATTRIBUTES
Internal Input Pulldown Resistor, R2
(CLK0, CLK0, CLK1, CLK1, SEL, SEL, EN, EN)
Internal Input Pullup Resistor, R1 (CLK0, CLK1, SEL, EN)
ESD Protection
Moisture Sensitivity (Note 3)
Flammability Rating
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
Parameter
T
(50 W Resistor)
Characteristics
http://onsemi.com
V
V
V
V
V
V
Continuous
Surge
Static
Surge
0 LFPM
500 LFPM
2S2P (Note 4)
< 15 sec.
Oxygen Index: 28 to 34
Charged Device Model
EE
EE
CC
CC
CC
CC
Condition 1
Human Body Model
= 0 V
= 0 V
= 0 V
= 0 V
− V
− V
EE
EE
Machine Model
5
w 2.8 V
t 2.8 V
V
V
49 FCBGA
49 FCBGA
49 FCBGA
I
I
 V
 V
Condition 2
CC
EE
UL 94 V−0 @ 0.125 in
36.5 kW
> 100 V
Level 3
> 2 kV
> 1 kV
Value
75 kW
479
−65 to +150
|V
−40 to +70
CC
Rating
2 to 4
−3.6
−3.6
225
3.6
3.6
2.8
25
50
45
80
67
57
1
1
− V
EE
|
Units
°C/W
°C/W
°C/W
mA
mA
mA
mA
mA
mA
°C
°C
°C
V
V
V
V
V
V