nb6n14s ON Semiconductor, nb6n14s Datasheet - Page 5

• Manufacturer Part Number: nb6n14s
• Description: 3.3 V 1 4 Anylevel Differential Input To Lvds Fanout Buffer/translator
• Manufacturer: ON Semiconductor

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
12. Measured by forcing V
13. Input voltage swing is a single−ended measurement operating in differential mode.
14. RMS jitter with 50% Duty Cycle clock signal at 750 MHz.
15. Deterministic jitter with input NRZ data at PRBS 2
16. Skew is measured between outputs under identical transition @ 250 MHz.
17. The worst case condition between Q0/Q0 and Q1/Q1 from either D0/D0 or D1/D1, when both outputs have the same transition.
Table 6. AC CHARACTERISTICS
Symbol
f
V
f
t
t
t
t
t
t
V
t
t
inMax
DATA
PLH
PHL
s
h
SKEW
JITTER
r
f
OUTPP
INPP
edge rates 150 ps (20%−80%). See Figure 13.
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Maximum Input Clock Frequency
Output Voltage Amplitude (@ V
(Figure 4)
Maximum Operating Data Rate
Differential Input to Differential Output
Propagation Delay
Setup Time
Hold Time
Within Device Skew (Note 17)
Device−to−Device Skew (Note 16)
RMS Random Clock Jitter (Note 14)
Deterministic Jitter (Note 15)
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 13)
Output Rise/Fall Times @ 250 MHz
(20% − 80%)
INPPmin
400
350
300
250
200
150
100
Characteristic
50
0
Input Clock Frequency (f
with 50% duty cycle clock source and V
0
Figure 4. Output Voltage Amplitude (V
V
CC
INPPmin
= 3.0 V to 3.6 V, GND = 0 V; (Note 12)
f
f
f
DATA
DATA
DATA
0.5
) f
f
= 622 Mb/s
= 1.5 Gb/s
= 2.488 Gb/s
f
f
f
in
in
in
in
in
23
INPUT CLOCK FREQUENCY (GHz)
= 1.5 GHz
= 2.0 GHz
= 1.0 GHz
= 1.5 GHz
≤ 1.0 GHz
−1 and K28.5.
http://onsemi.com
1
Q, Q
in
NB6N14S
) and Temperature (@ V
Min
220
200
170
300
300
500
100
2.0
1.5
60
5
1.5
CC
−40°C
Typ
350
300
270
450
120
2.5
0.5
0.5
6.0
7.0
60
70
30
10
5
− 1400 mV offset. All loading with an external R
V
GND
Max
600
200
190
1.0
1.0
20
20
20
20
CC
2
OUTPP
85°C
−
Min
220
200
170
300
300
500
100
2.0
1.5
60
) versus
CC
2.5
25°C
Typ
350
300
270
450
120
= 3.3 V)
2.5
0.5
0.5
6.0
7.0
−40°C
60
70
30
10
5
25°C
V
GND
Max
600
200
190
1.0
1.0
20
20
20
20
CC
3
−
Min
220
200
170
300
300
500
100
2.0
1.5
60
85°C
Typ
350
300
270
450
120
2.5
0.5
0.5
6.0
7.0
60
70
30
10
5
L
= 100 W. Input
V
GND
Max
600
200
190
1.0
1.0
20
20
20
20
CC
−
GHz
Gb/s
Unit
mV
mV
ps
ps
ps
ps