lmv1015xrx-25 National Semiconductor Corporation, lmv1015xrx-25 Datasheet

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lmv1015xrx-25

Manufacturer Part Number
lmv1015xrx-25
Description
Built-in Gain Ic S For High Sensitivity 2-wire Microphones
Manufacturer
National Semiconductor Corporation
Datasheet
© 2005 National Semiconductor Corporation
LMV1015 Analog Series:
Built-in Gain IC’s for High Sensitivity 2-Wire
Microphones
General Description
The LMV1015 is an audio amplifier series for small form
factor electret microphones. This 2-wire portfolio is designed
to replace the JFET amplifier. The LMV1015 series is ideally
suited for applications requiring high signal integrity in the
presence of ambient or RF noise, such as in cellular com-
munications. The LMV1015 audio amplifiers are guaranteed
to operate over a 2.2V to 5.0V supply voltage range with
fixed gains of 15.6 dB and 23.8 dB. The devices offer excel-
lent THD, gain accuracy and temperature stability as com-
pared to a JFET microphone.
The LMV1015 series enables a two-pin electret microphone
solution, which provides direct pin-to-pin compatibility with
the existing older JFET market.
National Semiconductors built-in gain families are offered in
extremely thin space saving 4-bump micro SMD packages
(0.3 mm maximum). The LMV1015XR is designed for 1.0
mm ECM canisters and thicker. These extremely miniature
packages have the Large Dome Bump (LDB) technology.
This micro SMD technology is designed for microphone
PCBs requiring 1 kg adhesion criteria.
Schematic Diagram
DS201289
20128901
Features
(Typical LMV1015-15, 2.2V supply, R
V
n Supply voltage
n Supply current
n Signal to noise ratio (A-weighted)
n Output voltage noise (A-weighted)
n Total harmonic distortion
n Voltage gain
n Temperature range
n Large Dome 4-Bump micro SMD package with improved
Applications
n Cellular phones
n Headsets
n Mobile communications
n Automotive accessories
n PDAs
n Accessory microphone products
Built-In Gain Electret Microphone
IN
adhesion technology.
— LMV1015-15
— LMV1015-25
= 18 mV
PP
, unless otherwise specified)
L
= 2.2 kΩ, C = 2.2 µF,
−40˚C to 85˚C
www.national.com
May 2005
<
−89 dBV
20128902
15.6 dB
23.8 dB
2V - 5V
180 µA
0.09%
60 dB

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lmv1015xrx-25 Summary of contents

Page 1

... ECM canisters and thicker. These extremely miniature packages have the Large Dome Bump (LDB) technology. This micro SMD technology is designed for microphone PCBs requiring 1 kg adhesion criteria. Schematic Diagram © 2005 National Semiconductor Corporation Features (Typical LMV1015-15, 2.2V supply unless otherwise specified) ...

Page 2

Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. ESD Tolerance (Note 2) Human Body Model Machine Model Supply Voltage V - GND DD Storage Temperature Range 2.2V ...

Page 3

Electrical Characteristics Unless otherwise specified, all limits guaranteed for T Boldface limits apply at the temperature extremes. Symbol Parameter SNR Signal to Noise Ratio V Max Input Signal IN V Output Voltage OUT f Lower −3dB Roll Off Frequency ...

Page 4

... Package Part Number LMV1015XR-15 4-Bump Extreme Thin LMV1015XRX-15 micro SMD (0.3 mm max height) LMV1015XR-25 lead free only LMV1015XRX-25 4-Bump Ultra-Thin LMV1015UR-15 micro SMD LMV1015URX-15 (0.4 mm max height) LMV1015UR-25 lead free only LMV1015URX-25 Note: All packages are supplied with large dome bump technology for 1kg adhesion criteria. ...

Page 5

Typical Performance Characteristics C = 2.2 µF, single supply 25˚C A Supply Current vs. Supply Voltage (LMV1015-15) Gain and Phase vs. Frequency (LMV1015-15) Total Harmonic Distortion vs. Frequency (LMV1015-15) Unless otherwise specified, V Supply Current vs. Supply Voltage ...

Page 6

Typical Performance Characteristics C = 2.2 µF, single supply 25˚C (Continued) A Total Harmonic Distortion vs. Input Voltage (LMV1015-15) Output Noise vs. Frequency (LMV1015-15) www.national.com Unless otherwise specified, V Total Harmonic Distortion vs. Input Voltage 20128907 Output Noise ...

Page 7

Application Section HIGH GAIN The LMV1015 series provides outstanding gain versus the JFET and still maintains the same ease of implementation, with improved gain, linearity and temperature stability. A high gain eliminates the need for extra external components. BUILT IN ...

Page 8

Application Section (Continued) SPL needs to be converted to the absolute sound pressure in dBPa. This is the sound pressure level in decibels referred to 1 Pascal (Pa). The conversion is given by: dBPa = dB SPL + 20*log 20 ...

Page 9

Application Section (Continued) FIGURE 6. RF Noise Reduction 9 20128908 www.national.com ...

Page 10

Physical Dimensions NOTE: UNLESS OTHERWISE SPECIFIED. 1. FOR SOLDER BUMP COMPOSITION, SEE "SOLDER INFORMATION" IN THE PACKAGING SECTION OF THE NATIONAL SEMICONDUCTOR WEB PAGE (www.national.com). 2. RECOMMEND NON-SOLDER MASK DEFINED LANDING PAD. 3. PIN A1 IS ESTABLISHED BY LOWER LEFT ...

Page 11

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. For the most current product information ...

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