lmh2100tmx National Semiconductor Corporation, lmh2100tmx Datasheet

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lmh2100tmx

Manufacturer Part Number
lmh2100tmx
Description
Logarithmic Power Detector For Cdma And Wcdma 6-pin Usmd T/r
Manufacturer
National Semiconductor Corporation
Datasheet

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© 2008 National Semiconductor Corporation
LMH2100
50 MHz to 4 GHz 40 dB Logarithmic Power Detector for
CDMA and WCDMA
General Description
The LMH2100 is a 40 dB RF power detector intended for use
in CDMA and WCDMA applications. The device has an RF
frequency range from 50 MHz to 4 GHz. It provides an accu-
rate temperature and supply compensated output voltage that
relates linearly to the RF input power in dBm. The circuit op-
erates with a single supply from 2.7V to 3.3V.
The LMH2100 has an RF power detection range from −45
dBm to −5 dBm and is ideally suited for direct use in combi-
nation with a 30 dB directional coupler. Additional low-pass
filtering of the output signal can be realized by means of an
external resistor and capacitor. Figure (a) shows a detector
with an additional output low pass filter. The filter frequency
is set with R
Figure (b) shows a detector with an additional feedback low
pass filter. Resistor R
impedance gain (R
C
The device is active for Enable = High, otherwise it is in a low
power consumption shutdown mode. To save power and pre-
vent discharge of an external filter capacitance, the output
(OUT) is high-impedance during shutdown.
The LMH2100 power detector is offered in the small 0.4 mm
pitch micro SMD package.
Typical Application
P
//C
TRANS
(a) LMH2100 with Output RC Low Pass Filter
and R
S
and C
P
//R
S
TRANS
.
TRANS
P
is optional and will lower the Trans
). The filter frequency is set with
.
300140
30014071
Features
Applications
(b) LMH2100 with Feedback (R)C Low Pass Filter
40 dB linear in dB power detection range
Output voltage range 0.3 to 2V
Shutdown
Multi-band operation from 50 MHz to 4 GHz
0.5 dB accurate temperature compensation
External configurable output filter bandwidth
0.4 mm-pitch micro SMD package
UMTS/CDMA/WCDMA RF power control
GSM/GPRS RF power control
PA modules
IEEE 802.11b, g (WLAN)
March 21, 2008
www.national.com
30014004

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lmh2100tmx Summary of contents

Page 1

... The LMH2100 power detector is offered in the small 0.4 mm pitch micro SMD package. Typical Application (a) LMH2100 with Output RC Low Pass Filter © 2008 National Semiconductor Corporation Features ■ linear in dB power detection range ■ Output voltage range 0 ■ ...

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Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage V - GND DD RF Input Input power DC Voltage Enable Input Voltage V - 0.4V < ...

Page 3

Symbol Parameter I Output Leakage Current in OUT,SD Shutdown mode RF Detector Transfer V Maximum Output Voltage OUT,MAX P = −5 dBm IN (Note 8) V Minimum Output Voltage OUT,MIN (Pedestal) ΔV Output Voltage Range OUT P from −45 dBm ...

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Symbol Parameter Power Measurement Performance E Log Conformance Error LC (Note 8) ≤ ≤ −40 dBm P −10 dBm IN E Variation over Temperature VOT (Note 8) ≤ ≤ −40 dBm P −10 dBm IN E Measurement Error for a ...

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Symbol Parameter S Temperature Sensitivity T −40°C < T < 25°C, (Note −10 dBm IN S Temperature Sensitivity T 25°C < T < 85°C, (Note −10 dBm IN P Maximum Input Power ...

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... RF Output B2 REF A2 OUT Ordering Information Package Part Number LMH2100TM 6-Bump micro SMD LMH2100TMX Block Diagram www.national.com 6-Bump micro SMD 30014002 Top View Positive Supply Voltage DD Power Ground The device is enabled for EN = High, and brought to a low-power shutdown mode for EN = Low. RF input signal to the detector, internally terminated with 50Ω. ...

Page 7

Typical Performance Characteristics T = 25°C, measured on a limited number of samples. A Supply Current vs. Supply Voltage Output Voltage vs. RF input Power Log Intercept vs. Frequency Unless otherwise specified, V Supply Current vs. Enable Voltage 30014005 Log ...

Page 8

Mean Output Voltage and Log Conformance Error vs. RF Input Power at 50 MHz Mean Output Voltage and Log Conformance Error vs. RF Input Power at 1855 MHz Mean Output Voltage and Log Conformance Error vs. RF Input Power at ...

Page 9

Mean Output Voltage and Log Conformance Error vs. RF Input Power at 4000 MHz Log Conformance Error (Mean ±3 sigma) vs. RF Input Power at 900 MHz Log Conformance Error (Mean ±3 sigma) vs. RF Input Power at 2500 MHz ...

Page 10

Log Conformance Error (Mean ±3 sigma) vs. RF Input Power at 3500 MHz Mean Temperature Drift Error vs. RF Input Power at 50 MHz Mean Temperature Drift Error vs. RF Input Power at 1855 MHz www.national.com Log Conformance Error (Mean ...

Page 11

Mean Temperature Drift Error vs. RF Input Power at 3000 MHz Mean Temperature Drift Error vs. RF Input Power at 4000 MHz Temperature Drift Error (Mean ±3 sigma) vs. RF Input Power at 900 MHz Mean Temperature Drift Error vs. ...

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Temperature Drift Error (Mean ±3 sigma) vs. RF Input Power at 2500 MHz Temperature Drift Error (Mean ±3 sigma) vs. RF Input Power at 3500 MHz Error for 1 dB Input Power Step vs. RF Input Power at 50 MHz ...

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Error for 1 dB Input Power Step vs. RF Input Power at 1855 MHz 30014028 Error for 1 dB Input Power Step vs. RF Input Power at 3000 MHz 30014030 Error for 1 dB Input Power step vs. RF Input ...

Page 14

Error for 10 dB Input Power Step vs. RF Input Power at 900 MHz Error for 10 dB Input Power Step vs. RF Input Power at 2500 MHz Error for 10 dB Input Power Step vs. RF Input Power at ...

Page 15

Mean Temperature Sensitivity vs. RF Input Power at 50 MHz 30014038 Mean Temperature Sensitivity vs. RF Input Power at 1855 MHz 30014040 Mean Temperature Sensitivity vs. RF Input Power at 3000 MHz 30014042 Mean Temperature Sensitivity vs. RF Input Power ...

Page 16

Mean Temperature Sensitivity vs. RF Input power at 4000 MHz Temperature Sensitivity (Mean ±3 sigma) vs. RF Input Power at 900 MHz Temperature Sensitivity (Mean ±3 sigma) vs. RF Input Power at 2500 MHz www.national.com Temperature Sensitivity (Mean ±3 sigma) ...

Page 17

Temperature Sensitivity (Mean ±3 sigma) vs. RF Input Power at 3500 MHz Output Voltage and Log Conformance Error vs. RF Input Power for Various Modulation Types at 900 MHz RF Input Impedance vs. Frequency (Resistance & Reactance) Temperature Sensitivity (mean ...

Page 18

Power Supply Rejection Ratio vs. Frequency Sourcing Output Current vs. Output Voltage Output Voltage vs. Sourcing Current www.national.com Output Amplifier Gain & Phase vs. Frequency 30014047 Sinking Output Current vs. Output Voltage 30014009 Output Voltage vs. Sinking Current 30014011 18 ...

Page 19

Application Information The LMH2100 is a versatile logarithmic RF power detector suitable for use in power measurement systems. The LMH2100 is particularly well suited for CDMA and UMTS ap- plications. It produces a DC voltage that is a measure for ...

Page 20

FIGURE 1. Convex Detector Transfer Function (a) and Linear Transfer Function (b) Figure 1 shows two different representations of the detector transfer function. In both graphs the input power along the horizontal axis is displayed in dBm, since most ...

Page 21

The advantages and disadvantages can be summarized as follows: • The temperature stability of (R)MS detectors is almost ...

Page 22

This can be accomplished by using two LMH2100 RF power detectors according to Figure 4. A directional coupler is used to separate the forward and reflected power waves on the transmission line between the PA and the antenna. One ...

Page 23

Values for the parameters in this formula. The values for the parameters in the model can be obtained in various ways. They can be based on measurements of the detector transfer function in a precisely controlled environ- ment (parameter ...

Page 24

However, since the drift error is usually small V (T) is only slightly different from V OUT means that we can apply the following approximation: This expression is easily simplified by taking the following considerations into account: • ...

Page 25

FIGURE 8. Elimination of the Systematic Component from the Temperature Drift The mean drift error represents the reproducible - systematic - part of the error, while the mean ± 3 sigma limits represent the combined systematic plus random error component. ...

Page 26

In a practical power measurement system, temperature com- pensation is usually only applied to a small power range around the maximum power level for two reasons: • The various communication standards require the highest accuracy in this range to limit ...

Page 27

Forcing a voltage to the enable input that is 400 mV higher than V or 400 mV lower than GND will damage DD the device and further ...

Page 28

The differential topology has the advantage that it is compen- sated for temperature drift of the internal reference voltage. This can be explained by looking at the transimpedance am- plifier of the LMH2100 (Figure 13). FIGURE 13. Output Stage of ...

Page 29

Low frequency supply voltage variations due to PA switching might result in a ripple at the output voltage. The LMH2100 has a Power Supply Rejection Ration for low fre- quencies. 4.1.2 Ground (GND) The LMH2100 needs a ...

Page 30

The characteristic impedance of the transmission line is mainly determined by the width W and the distance S. In order to minimize reflec- tions, the width W of the center trace should match ...

Page 31

Physical Dimensions inches (millimeters) unless otherwise noted X1=0.840 ±0.030 mm, X2=1.240 ±0.030 mm, X3=0.600 ± 0.075 mm 6-Bump micro SMD NS Package Number TMD06BBA 31 www.national.com ...

Page 32

... National Semiconductor and the National Semiconductor logo are registered trademarks of National Semiconductor Corporation. All other brand or product names may be trademarks or registered trademarks of their respective holders. ...

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