mc100e167fnr2 ON Semiconductor, mc100e167fnr2 Datasheet - Page 5

• Manufacturer Part Number: mc100e167fnr2
• Description: 6-bit 2 1 Mux-register
• Manufacturer: ON Semiconductor

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
7. Input and output parameters vary 1:1 with V
8. Outputs are terminated through a 50 W resistor to V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
9. 10 Series: V
10. Within-device skew is defined as identical transitions on similar paths through a device.
Table 7. 100E SERIES NECL DC CHARACTERISTICS
Symbol
Table 8. AC CHARACTERISTICS
Symbol
I
V
V
V
V
I
I
f
t
t
t
t
t
t
t
t
t
t
EE
IH
IL
MAX
PLH
PHL
s
h
RR
PW
SKEW
JITTER
r
f
OH
OL
IH
IL
100 Series: V
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Power Supply Current
Output HIGH Voltage (Note 8)
Output LOW Voltage (Note 8)
Input HIGH Voltage
Input LOW Voltage
Input HIGH Current
Input LOW Current
Maximum Toggle Frequency
Propagation Delay to Output
Setup Time
Hold Time
Reset Recovery Time
Minimum Pulse Width
Within-Device Skew (Note 10)
Random Clock Jitter (RMS)
Rise/Fall Times
(20 - 80%)
EE
EE
can vary −0.46 V / +0.06 V.
can vary −0.46 V / +0.8 V.
Characteristic
Characteristic
V
CCx
Clk, MR
Clk, MR
= 5.0 V; V
CC
SEL
SEL
. V
D
D
EE
−1025
−1810
−1165
−1810
CC
Min
0.5
can vary −0.46 V / +0.8 V.
EE
1000
Min
650
100
275
300
750
400
300
75
http://onsemi.com
− 2.0 V.
= 0.0 V or V
−1705
−1025
−1645
−950
0°C
Typ
V
0.3
94
1400
−125
− 50
0°C
Typ
850
125
550
450
CCx
< 1
50
75
5
= 0 V; V
CCx
−1620
−1475
−880
−880
Max
113
150
1050
Max
800
= 0.0 V; V
EE
−1025
−1810
−1810
−1165
= −5.0 V (Note 7)
Min
0.5
1000
Min
650
100
275
300
750
400
300
75
EE
= −5.0 V (Note 9)
−1745
−1025
−1645
25°C
−950
0.25
Typ
25°C
1400
−125
− 50
94
Typ
850
125
550
450
< 1
50
75
−1620
−1475
−880
−880
Max
150
1050
113
Max
800
−1025
−1810
−1165
−1810
1000
Min
0.5
Min
650
100
275
300
750
400
300
75
−1740
−1025
−1645
85°C
−950
85°C
1400
−125
Typ
− 50
108
Typ
850
125
550
450
0.2
< 1
50
75
−1620
−1475
1050
−880
−880
Max
Max
800
130
150
MHz
Unit
Unit
mA
mV
mV
mV
mV
mA
mA
ps
ps
ps
ps
ps
ps
ps
ps