lsi1013xt1g Leshan Radio Company, lsi1013xt1g Datasheet - Page 4

• Manufacturer Part Number: lsi1013xt1g
• Description: P-channel 1.8-v G-s Mosfet
• Manufacturer: Leshan Radio Company

1000
–0.0
–0.1
–0.2
–0.3
100
0.3
0.2
0.1
10
1
–50
0.0
Threshold Voltage Variance vs. Temperature
Source-Drain Diode Forward Voltage
–25
0.2
T
J
V
= 25_C
SD
0.4
0
T
T
– Source-to-Drain Voltage (V)
J
J
= 125_C
– Temperature (_C)
25
0.6
I
D
50
0.8
= 0.25 mA
T
J
= –55_C
7
6
5
4
3
2
1
0
75
1.0
–50
100
1.2
–25
125
BV
1.4
_
0
T
GSS
J
– Temperature (_C)
vs. Temperature
25
50
75
3.0
2.5
2.0
1.5
1.0
0.5
0.0
LESHAN RADIO COMPANY, LTD.
5
4
3
2
1
0
–50
100
0
I
On-Resistance vs. Gate-to-Source Voltage
D
= 200 mA
–25
125
V
GS
1
= 4.5 V
V
I
GS
GSS
0
T
J
– Gate-to-Source Voltage (V)
2
– Temperature (_C)
vs. Temperature
25
I
3
D
= 350 mA
50
LSI1013XT1G
4
75
100
5
4/6
125
6