mma-343737-q10 MicroWave Technology, Inc., mma-343737-q10 Datasheet - Page 5

• Manufacturer Part Number: mma-343737-q10
• Description: 3.4 ? 3.7 Ghz 4w Linear Power Amplifier Module
• Manufacturer: MicroWave Technology, Inc.

A functional diagram is shown in Figure 3. The MMA-343737-Q10
amplifier includes bias tees for DC inputs at QFN Vdd1 pin 6 and
Vdd2 pin 8. In addition, the MMA-343737-Q10 has its own DC
blocking capacitors. The breakdown voltage for the blocking capacitor
is 30 VDC.
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MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
Data contained herein is subject to change without notice. All rights reserved © 2007
The measurements presented are recorded at Vdd=8.5 and Idq=1.0 A. The
evaluation board layout shown in Figure 1 is a double side printed circuit board; the
board material is Rogers’ 4003; the board thickness is 20 mils; the dielectric
constant is 3.38; and the copper trace weight is 1 oz. The trace width for 50 ohm
from J1 and J2 is 44 mils. A double row of stitch through holes, 25 mil diameters,
define the ground boundaries for the coplanar waveguide RF launch for J1 and J2.
The RF launch at QFN pin 2 and pin 11 are designed to match into 50 ohms so that
all stray capacitances and inductances at the interface has been minimized. The
MMA-343737-Q10 is matched to 50 ohms.
The QFN leads and center paddle sits lower than the thermo-set plastic material
used for the QFN body. There are 12 contact leads flushed to the edge of the QFN
510-651-6700
package which allows for visual inspection of solder joints. Six ground
contacts are provided; two pairs of grounds pads for each RF; two other
grounds, pin 7 and the center paddle. The other 7 contacts are for voltage
supplies and RF/video signals. The QNF package is a 10 x10 x 1.5 mm
and the finish is nickel 200 µin palladium 20 µin flash gold finish 6-10 µin.
The base material for the QFN is copper and its thickness is 8 mils. The
connector J4 shown in Figure 1 is a 12 pin double row header used to bring
power and signals to QFN amplifier.
The power detector circuitry includes an optional low pass filter on the
evaluation board which can be used to create a DC average of the RF
envelope. The unfiltered detector bandwidth is approximately 50 MHz.
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Page 5 of 12, Updated June 4, 2008
Application Note
FAX
510-651-2208
for information on other MwT MMIC products.
3.4 – 3.7 GHz 4W Linear Power Amplifier Module
WEB
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MMA-343737-Q10
Advance Data Sheet
June 2007