sg20n12dt Sirectifier Semiconductors, sg20n12dt Datasheet - Page 2

• Manufacturer Part Number: sg20n12dt
• Description: Discrete Igbts
• Manufacturer: Sirectifier Semiconductors

Reverse Diode (FRED)
Symbol
Symbol
R
R
C
t
C
R
C
t
t
t
Q
Q
E
E
E
I
d(off)
d(on)
d(on)
d(off)
thCK
g
Q
thJC
V
RM
oes
t
t
t
t
t
thJC
ies
res
off
on
off
ge
gc
ts
ri
fi
ri
fi
rr
F
g
I
Pulse test, t 300us, duty cycle 2%
V
I
Inductive load, T
I
V
Remarks:Switching times may increase
for V
increased R
Inductive load, T
I
V
Remarks:Switching times may increase
for V
increased R
I
V
L
I
C
C
C
C
F
F
CE
CE
CE
R
=I
=I
=I
=I
=12A; T
=1A; -di/dt=100A/us; V
=540V; I
C90
=25V; V
C90
C90
=0.8V
C90
=0.8V
0.05uH; T
CE
CE
; V
; V
; V
; V
(Clamp)
(Clamp)
T
CE
GE
GE
GE
CES'
CES'
VJ
VJ
SG20N12T, SG20N12DT
F
=150
=10V
=15V; V
=15V;
=15V; L=100uH;
=25
GE
G
G
=20A; -di
; R
; R
VJ
=0V; f=1MHz
o
=100
G
G
C
J
J
o
=25
=R
=125
=R
Test Conditions
Test Conditions
C
0.8V
0.8V
L=100uH;
CE
off
off
o
o
F
C
=0.5V
C
=47
=47
/dt=100A/us
o
CES'
CES'
C
R
=30V; T
higher T
higher T
CES
Discrete IGBTs
VJ
=25
J
J
or
or
o
C
min.
min.
12
Characteristic Values
Characteristic Values
(T
(T
J
J
=25
=25
o
o
1750
0.90
C , unless otherwise specified)
C , unless otherwise specified)
typ.
400
380
700
550
typ.
0.25
9.5
16
31
63
13
26
28
20
6.5
30
27
40
90
7
max.
max.
1.87
10.5
2.15
800
700
0.83
1.6
60
K/W
K/W
K/W
Unit
Unit
mJ
mJ
mJ
nC
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
A