sg200n06s Sirectifier Semiconductors, sg200n06s Datasheet
sg200n06s
Manufacturer Part Number
sg200n06s
Description
Discrete Igbts
Manufacturer
Sirectifier Semiconductors
Datasheet
1.SG200N06S.pdf
(2 pages)
(RBSOA)
Symbol
Weight
SSOA
V
V
V
V
V
T
I
I
T
I
M
P
C25
C90
T
CGR
GEM
CES
GES
CM
ISOL
JM
stg
G=Gate, C=Collector, E=Emitter
Symbol
BV
C
J
V
d
V
I
I
GE(th)
CES
GES
CE(sat)
CES
E
E
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L=30uH
50/60Hz
I
Mounting torque
Terminal connection torque(M4)
T
ISOL
J
J
C
C
C
C
GE
=25
=25
=25
=90
=25
=25
=15V; T
C
G
o
o
o
o
o
o
I
I
V
V
V
I
C to 150
C to 150
C
C
C
C
C
C, 1 ms
C
1 mA
CE
GE
CE
=250uA; V
=10mA; V
=I
=0.8V
=0V;
=0V; V
C90
VJ
; V
=125
GE
o
o
CES
C
C; R
GE
t =1 min
t =1 s
=15V
CE
GE
o
;
=±20V
C; R
=V
=0V
Test Conditions
GE
GE
T
T
Test Conditions
=1 M ;
J
J
G
=25
=125
=22
o
C
o
SG200N06S
C
Discrete IGBTs
Dimensions SOT-227(ISOTOP)
min.
600
2.5
Characteristic Values
(T
J
=25
Maximum Ratings
o
@ 0.8 V
C , unless otherwise specified)
typ.
-55...+150
-55...+150
I
CM
1.5/13
1.5/13
2500
3000
600
600
±20
±30
200
100
300
150
600
30
=100
Dim.
CES
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
max.
±400
31.50
14.91
30.12
37.80
11.68
12.60
25.15
26.54
24.59
0.780
200
-0.05
2.5
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
3.30
Min.
6
2
Millimeter
31.88
15.11
30.30
38.20
12.22
12.85
25.42
26.90
25.07
0.830
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
4.57
0.1
-0.002
Nm/Ib.in.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
0.130
19.81
Min.
Unit
mA
uA
nA
Unit
Inches
V~
V
V
V
o
V
V
A
A
W
g
C
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
Max.
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sg200n06s Summary of contents
Page 1
... =10mA GE(th =0. CES CE CES J V =0V =0V; V =±20V GES =15V CE(sat) C C90 GE SG200N06S Discrete IGBTs Dimensions SOT-227(ISOTOP =125 C Dim. Millimeter Min. Max. Min. A 31.50 31.88 1.240 B 7.80 8.20 0.307 C 4.09 4.29 0.161 D 4.09 4.29 0.161 E 4.09 4.29 0.161 F 14.91 15.11 0.587 G 30 ...
Page 2
... CES G off t Remarks:Switching times may d(off) t increase for V (Clamp higher T or increased R off J R thJC R thCK SG200N06S Discrete IGBTs Characteristic Values min. 40 CES higher T or CES 0.8V CES = unless otherwise specified) J Unit typ. max 9000 ...