om6n100sa International Rectifier Corp., om6n100sa Datasheet - Page 4

• Manufacturer Part Number: om6n100sa
• Description: Power Mosfet In Hermetic Isolated Jedec Package
• Manufacturer: International Rectifier Corp.

3.1
OM1N100SA/ST Series
ABSOLUTE MAXIMUM RATINGS (T
THERMAL RESISTANCE
Symbol
I
E
E
V
V
I
I
I
V
P
P
Junction-To-Case
Junction-To-Ambient Linear Derating Factor
T
T
Lead Temperature
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
R
AR
D
D
DM
J
stg
AS
AR
DS
DGR
GS
D
D
thJC
@ T
@ T
@ T
@ T
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA
C
C
C
C
= 25°C
= 100°C
= 25°C
=100°C
.150
.140
.035
.025
Z-TAB
Junction-To-Case
Parameter
Avalanche Current
(Repetitive or Non-Repetitive)
T
T
Single Pulse Avalanche Energy
Starting T
V
Repetitive Avalanche Energy
(Pulse width limited by T
Drain-Source Voltage
Drain-Source Voltage (R
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating and
Storage Temperature Range
(1/16" from case for 10secs.)
.420
.410
MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.
j
j
DD
205 Crawford Street, Leominster, MA 01453 USA [phone] FAX [phone]
= 25°C
= 100°C
= 25V
TO-257AA
.537
.527
.750
.500
.100 TYP.
.665
.645
j
= 25°C, I
.430
.410
.200
.190
Max.
D
.038 MAX.
= I
1
.120 TYP.
.045
.035
.005
AR
C
J
GS
MECHANICAL OUTLINE
,
max, d < 1%)
= 25°C unless otherwise noted)
= 20k )
PACKAGE OPTIONS
OM1N100SA OM3N100SA OM5N100SA OM6N100SA
OM1N100ST OM3N100ST
6 PIN SIP
D
-55 to 150
FET 1
S
1000
1000
.020
1.15
130
±20
300
3.5
.50
.30
.87
14
90
32
G
2
6
G
FET 2
S
D
-55 to 150
1000
1000
.020
1.15
130
±20
300
3.5
3.5
2.0
.87
14
90
32
2
6
.144 DIA.
.685
.665
-55 to 150
.045
.035
1000
1000
2.10
.020
850
±20
130
300
3.4
5.0
3.1
.48
16
24
51
6
.545
.535
TO-254AA
.150 TYP.
MOD PAK
.800
.790
.550
.510
-55 to 150
FET 1
FET 4
G
D S G
1000
1000
2.10
.020
850
±20
130
300
S
3.4
6.0
3.7
.48
16
24
51
D
6
G
G
FET 3
FET 3
.550
.530
S
S
D
D
.260
.249
W/°C
W/°C
°C/W
Units
.150 TYP.
.050
.040
mJ
mJ
°C
°C
W
W
.005
A
A
V
V
A
A
A
V