mt3s22p TOSHIBA Semiconductor CORPORATION, mt3s22p Datasheet - Page 2

• Manufacturer Part Number: mt3s22p
• Description: Toshiba Transistor Silicon Npn Epitaxial Planar Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Microwave Characteristics
Electrical Characteristics
Caution:
Transition frequency
Insertion gain
Noise figure
3
intercept point
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Note.3: C re is measured using a 3-terminal method with capacitance bridge
This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
rd
order intermodulation distortion output
Characteristics
Characteristics
(Ta = 25°C)
(Ta = 25°C)
|S21e|
|S21e|
Symbol
Symbol
OIP3
I
I
hFE
CBO
EBO
C
NF
f
T
re
2
2
(1)
(2)
V
V
V
V
V
⊿f=1MHz
V
V
V
V
CE
CE
CE
CE
CE
CB
EB
CE
CB
=5V, I
=5V, I
=5V, I
=5V, I
=5V,I
=6V, I
=1V, I
=5V, I
=5V, I
2
C
C
C
C
C
C
E
C
E
Test Condition
Test Condition
=50mA,f=500MHz,
=0
=0
=0, f=1MHz (Note3)
=50mA
=50mA, f=500MHz
=50mA, f=1GHz
=20mA, f=1GHz
=50mA
Min
Min
100
6.5
7.5
31
⎯
⎯
⎯
⎯
⎯
Typ.
10.5
Typ.
8.5
1.5
16
35
⎯
⎯
⎯
1
Max
Max
1.25
100
100
250
1.9
⎯
⎯
⎯
⎯
MT3S22P
2009-12-10
dBmW
GHz
Unit
Unit
dB
dB
nA
nA
pF
-