mt3s04afs TOSHIBA Semiconductor CORPORATION, mt3s04afs Datasheet - Page 2

• Manufacturer Part Number: mt3s04afs
• Description: Toshiba Transistor Silicon Npn Epitaxial Planar Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Microwave Characteristics
Electrical Characteristics
Caution
Transition frequency
Insertion gain
Noise figure
Collector cutoff current
Emitter cutoff current
DC current gain
Reverse transfer capacitance
Note: C
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
re
is measured with a three-terminal method using a capacitance bridge.
Characteristic
Characteristic
(Ta = 25°C)
(Ta = 25°C)
⎪S
⎪S
Symbol
Symbol
NF (1)
21e
21e
I
I
CBO
EBO
h
C
f
FE
T
re
⎪
⎪
2
2
(1)
(2)
V
V
V
V
V
V
V
V
CE
CE
CE
CE
CB
EB
CE
CB
= 3 V, I
= 1 V, I
= 3 V, I
= 1 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
2
C
C
C
C
C
E
C
E
= 0
= 0
= 0, f = 1 MHz(Note)
= 7 mA
= 5 mA, f = 1 GHz
= 20 mA, f = 1 GHz
= 5 mA, f = 1 GHz
= 5 mA
Condition
Condition
10.5
Min
Min
80
⎯
⎯
⎯
⎯
⎯
5
Typ.
Typ.
9.5
1.3
0.8
13
⎯
⎯
⎯
7
MT3S04AFS
2007-11-01
Max
Max
1.05
160
2.2
0.1
⎯
⎯
⎯
1
GHz
Unit
Unit
μA
μA
dB
dB
pF