mt3s03at TOSHIBA Semiconductor CORPORATION, mt3s03at Datasheet - Page 2

• Manufacturer Part Number: mt3s03at
• Description: Toshiba Transistor Silicon Npn Epitaxial Planar Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Caution
This device is sensitive to electrostatic discharge. Please handle with caution.
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Note: C
re
Characteristics
is measured by 3 terminal method with capacitance bridge.
(Ta = 25°C)
Symbol
I
I
CBO
EBO
h
C
FE
re
V
V
V
V
CB
EB
CE
CB
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
2
C
E
C
E
Test Condition
= 0
= 0
= 0, f = 1 MHz
= 5 mA
(Note)
Min
80
⎯
⎯
⎯
Typ.
0.75
⎯
⎯
⎯
MT3S03AT
2007-11-01
Max
160
0.1
1.1
1
Unit
μA
μA
pF