mt3s106fs TOSHIBA Semiconductor CORPORATION, mt3s106fs Datasheet - Page 2

• Manufacturer Part Number: mt3s106fs
• Description: Toshiba Transistor Silicon-germanium Npn Epitaxial Planer Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Microwave Characteristics
Electrical Characteristics
Note :
Caution:
Transition Frequency
Insertion Gain
Noise Figure
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transistor Capacitance
This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of
fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.
Cre is measured by 3 terminal method with capacitance Bridge.
Characteristics
Characteristics
(Ta = 25°C)
(Ta = 25°C)
|S21e|
|S21e|
Symbol
Symbol
I
I
hFE
CBO
EBO
C
NF
fT
re
2
2
(1)
(2)
V
V
V
V
V
V
V
V
CE
CE
CE
CE
CB
EB
CE
CB
2
=1V, I
=1V, I
=3V, I
=1V, I
=5V, I
=1V, I
=1V, I
=1V, I
C
C
C
C
C
E
C
E
Test Condition
Test Condition
=0
=0
=0, f=1MHz (Note )
=10mA
=10mA, f=2GHz
=20mA, f=2GHz
=10mA, f=2GHz
=5mA
110
Min
Min
6.5
8.5
-
-
-
-
-
Typ.
Typ.
8.5
1.2
0.5
10
8
-
-
-
MT3S106FS
2007-11-01
Max
Max
160
0.1
0.5
0.7
2
-
-
-
GHz
Unit
Unit
dB
dB
dB
µA
µA
pF
-