fmc49n20t2 Fuji Electric holdings CO.,Ltd, fmc49n20t2 Datasheet - Page 4
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fmc49n20t2
Manufacturer Part Number
fmc49n20t2
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.FMC49N20T2.pdf
(22 pages)
Fuji Electric Device Technology Co.,Ltd.
Dynamic Ratings
Forward
Input Capacitance
Output Capacitance
Reverse Transfer
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Reverse Diode
Diode Forward
Reverse Recovery
Reverse Recovery
7.Thermal Resistance
Channel to Case
Channel to Ambient
Note *1 : Tch 150°C, See Fig.1 and Fig.2
Note *2 : Starting Tch=25 C,I
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *4 : I
Transconductance g
Description
Description
Description
E
See to the 'Avalanche Energy' graph of page 21/22.
See to the 'Maximum Transient Thermal impedance' graph of page 22/22.
F
Capacitance Crss
AS
-I
On-Voltage V
limited by maximum channel temperature and avalanche current.
D
,-di/dt=50A/ s,Vcc BV
Charge Qrr
Time trr
Ciss
Coss
td(on)
tr
td(off)
tf
Q
Q
Q
Rth(ch-c)
Rth(ch-a)
Symbol
fs
Symbol
SD
G
GS
GD
AS
=20A,L=2.33mH,Vcc=48V,R
I
V
V
V
f=1MHz
V
V
I
R
V
I
V
I
V
I
V
-di/dt=100A/ s
T
D
D
D
F
F
ch
DS
DS
GS
cc
GS
GS
cc
GS
=49A
GS
=49A
GS
=24.5A
=24.5A
=49A
Symbol
DSS
=25 C
=180V
=180V
=25V
=25V
=0V
=10V
=10V
=0V
=0V
=10
,Tch 150 C
Conditions
Conditions
T
ch
=25 C
G
MS5F6124
= 5 0 Ω , S e e F i g . 1 a n d F i g . 2
min.
min.
min.
13
-
-
-
-
-
-
-
-
-
-
-
-
-
6600
1.00
1.25
typ.
440
230
160
140
typ.
180
typ.
26
34
64
94
30
46
0.463
max.
9900
max.
max.
1.50
660
345
240
141
210
51
96
45
69
75
-
-
-
4 / 22
H04-004-03
C/W
C/W
Unit
Unit
Unit
C
pF
nC
ns
ns
S
V
a