FMI10N60E
Super FAP-E
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, I
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Maximum Power Dissipation
Operating and Storage Temperature range
Isolation Voltage
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Description
Thermal resistance
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Thermal Characteristics
Features
Maintains both low power loss and low noise
Lower R
More controllable switching dv/dt by gate resistance
Smaller V
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
E
See to 'Avalanche Energy' graph.
AS
limited by maximum channel temperature and avalanche current.
DS
GS
(on) characteristic
ringing waveform during switching
AS
=4A, L=47.7mH, Vcc=60V, R
3
series
G
=50Ω
Symbol
BV
V
I
I
R
g
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Q
Q
Q
I
V
trr
Qrr
Symbol
Rth (ch-c)
Rth (ch-a)
DSS
GSS
AV
fs
GS
SD
DS
G
GS
GD
DSS
(th)
(on)
Conditions
I
I
V
V
V
I
I
V
V
f=1MHz
V
V
I
R
V
I
V
L=3.05mH, T
I
I
-di/dt=100A/µs, Tch=25°C
D
D
D
D
D
D
F
F
DS
DS
GS
DS
GS
cc
GS
cc
GS
=10A, V
=10A, V
=250µA, V
=250µA, V
=5A, V
=5A, V
=5A
G
=10A
=15Ω
=300V
=300V
=600V, V
=480V, V
=±30V, V
=10V
=10V
=25V
=0V
GS
DS
GS
GS
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *4 : I
Note *5 : I
=25V
=10V
Symbol
V
V
I
I
V
I
E
E
dV/dt
-di/dt
P
T
T
V
T-Pack(L)
=0V, T
=0V
D
DP
AR
ch
stg
DS
DSX
GS
ISO
AS
AR
D
GS
DS
GS
GS
DS
Outline Drawings [mm]
ch
=0V
=V
=0V
=0V
=0V
=25°C
Channel to Ambient
GS
See to the 'Transient Themal impeadance' graph.
1
Test Conditions
Channel to Case
F
F
ch
≤-I
≤-I
=25°C
D
D
, -di/dt=100A/μs, Vcc≤BV
, dv/dt=4.4kV/μs, Vcc≤BV
T
T
N-CHANNEL SILICON POWER MOSFET
ch
ch
=25°C
=125°C
Characteristics
-55 to + 150
DSS
DSS
, Tch≤150°C.
, Tch≤150°C.
16.5
1.67
600
600
±40
±30
100
165
150
±10
416
4.4
10
2
min.
min.
600
2.5
10
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Equivalent circuit schematic
0.675
1800
kVrms
10.5
10.5
13.5
0.86
0.51
kV/µs
typ.
100
typ.
140
3.0
5.4
A/µs
Unit
10
12
20
18
47
mJ
mJ
9
°C
°C
-
-
-
-
V
V
A
A
V
A
W
Gate(G)
FUJI POWER MOSFET
max.
0.758
2700
max.
0.79
13.5
70.5
1.30
75.0
250
100
210
150
3.5
25
16
30
27
16
20
-
-
-
-
-
t = 60sec, f = 60Hz
Drain(D)
Source(S)
V
Remarks
Ta=25°C
Tc=25°C
GS
Note*1
Note*2
Note*3
Note*4
Note*5
= -30V
°C/W
°C/W
Unit
Unit
µA
nA
pF
nC
µS
µC
ns
Ω
V
V
S
A
V