sg50n06dt Sirectifier Semiconductors, sg50n06dt Datasheet - Page 2

• Manufacturer Part Number: sg50n06dt
• Description: Discrete Igbts
• Manufacturer: Sirectifier Semiconductors

Reverse Diode (FRED)
Symbol
Symbol
R
R
C
t
C
R
C
t
t
t
Q
Q
E
E
E
I
d(off)
d(on)
d(on)
d(off)
thCK
g
Q
thJC
V
RM
oes
t
t
t
t
t
thJC
ies
res
off
on
off
ge
gc
ts
ri
fi
ri
fi
rr
F
g
I
Pulse test, t 300us, duty cycle 2%
V
I
Inductive load, T
I
V
Remarks:Switching times may increase
for V
increased R
Inductive load, T
I
V
Remarks:Switching times may increase
for V
increased R
I
Pulse test; t
I
V
I
C
C
C
C
F
F
F
CE
CE
CE
R
=I
=I
=I
=I
=I
=I
=1A; -di/dt=200A/ms; V
=100V;
C90
C90
C90
=25V; V
C90
C90
=0.8V
C90
=0.8V
CE
CE
; V
; V
; V
; V
; V
; V
(Clamp)
(Clamp)
GE
GE
CE
GE
GE
GE
CES
CES
SG50N06T, SG50N06DT
=10V
=15V; V
=15V
=15V
=0V;
=0V; -di
GE
G
G
; R
; R
=0V; f=1MHz
300ms, duty cycle
G
G
J
J
=R
=R
=25
=25
Test Conditions
Test Conditions
0.8V
0.8V
F
CE
off
off
/dt=100A/ms
o
o
=2.7
=2.7
=0.5V
C
C
CES'
CES'
R
=30V
higher T
higher T
CES
Discrete IGBTs
22%
J
J
or
or
min.
min.
25
Characteristic Values
Characteristic Values
(T
(T
J
J
=25
=25
o
o
4000
0.25
C , unless otherwise specified)
340
100
110
C , unless otherwise specified)
typ.
200
150
280
250
typ.
3.0
4.2
35
30
40
50
50
50
50
35
2
2
max.
max.
175
0.65
180
100
300
270
2.5
2.5
50
6.0
0.62
50
K/W
K/W
K/W
Unit
Unit
mJ
mJ
mJ
nC
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
A