p2103hvg ETC-unknow, p2103hvg Datasheet - Page 2

• Manufacturer Part Number: p2103hvg
• Description: Dual N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: ETC-unknow

NIKO-SEM
1
2
3
REMARK: THE PRODUCT MARKED WITH “P2103HVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
Independent of operating temperature.
Pulse width limited by maximum junction temperature.
On-State Drain Current
Drain-Source On-State
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
2
1
3
1
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
2
2
2
2
2
1
1
Dual N-Channel Enhancement Mode
Field Effect Transistor
R
I
C
t
t
D(ON)
DS(ON)
C
C
Q
V
Q
Q
d(on)
d(off)
I
Q
g
I
SM
t
t
t
oss
SD
rss
S
rr
iss
fs
gs
gd
r
f
rr
g
DYNAMIC
V
I
D
GS
V
≅ 1A, V
I
DS
F
= 0V, V
= 5A, dl
V
V
= 0.5V
V
V
DS
I
2
GS
F
GS
DS
= 1A, V
= 5V, V
GS
= 4.5V, I
= 15V, I
V
= 10V, I
DS
DS
I
(BR)DSS
F
D
= 10V, R
/dt = 100A / µS
= 7A
= 15V, f = 1MHz
= 15V
GS
GS
D
D
, V
D
= 0V
= 10V
= 7A
= 5A
= 6A
GS
GEN
= 5V,
= 6Ω
C
= 25 °C)
25
P2103HVG
1650
15.5
365
170
5.5
6.7
7.9
21
15
24
18
11
25
11
9
Jun-29-2004
Lead-Free
1.3
2.5
1.2
35
21
25
20
18
40
20
SOP-8
mΩ
nC
pF
nS
nS
A
S
A
V