mcm67b618bfn9 Freescale Semiconductor, Inc, mcm67b618bfn9 Datasheet - Page 3

• Manufacturer Part Number: mcm67b618bfn9
• Description: 64k X 18 Bit Burstram Synchronous Fast Static Ram With Burst Counter And Self-timed Write , Inc
• Manufacturer: Freescale Semiconductor, Inc

MOTOROLA FAST SRAM
SYNCHRONOUS TRUTH TABLE
NOTES:
ASYNCHRONOUS TRUTH TABLE
NOTES:
ABSOLUTE MAXIMUM RATINGS
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
Power Supply Voltage
Voltage Relative to V SS for Any
Pin Except V CC
Output Current (per I/O)
Power Dissipation
Temperature Under Bias
Ambient Temperature
Storage Temperature
1. X means Don’t Care.
2. All inputs except G must meet setup and hold times for the low–to–high transition of clock (K).
3. Wait states are inserted by suspending burst.
1. X means Don’t Care.
2. For a write operation following a read operation, G must be high before the input data
E
H
H
X
X
X
X
L
L
L
required setup time and held high through the input data hold time.
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
Deselected
ADSP
Operation
X
H
H
H
H
H
H
L
L
Read
Read
Write
Rating
ADSC
X
X
H
H
H
H
L
L
L
ADV
(See Notes 1, 2, and 3)
G
H
L
X
X
H
H
(Voltages Referenced to V SS = 0 V)
X
X
X
X
X
L
L
(See Notes 1 and 2)
UW or LW
V in , V out
Symbol
T bias
V CC
T stg
I out
P D
T A
H
H
H
X
X
X
L
L
L
High–Z — Data In
–0.5 to V CC + 0.5
I/O Status
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
L–H
Data Out
High–Z
High–Z
K
–0.5 to 7.0
–55 to 125
–10 to 85
0 to 70
Value
1.6
30
External Address
External Address
External Address
Current Address
Current Address
Address Used
Next Address
Next Address
Unit
mA
W
V
V
C
C
C
N/A
N/A
inputs against damage due to high static volt-
ages or electric fields; however, it is advised that
normal precautions be taken to avoid application
of any voltage higher than maximum rated volt-
ages to this high–impedance circuit.
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established.
ensure the output devices are in High–Z at
power up.
This device contains circuitry to protect the
This BiCMOS memory circuit has been
This device contains circuitry that will
Read Cycle, Continue Burst
Read Cycle, Suspend Burst
Write Cycle, Continue Burst
Write Cycle, Suspend Burst
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Deselected
Deselected
Operation
MCM67B618B
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