n02l1618c1a-ds AMI Semiconductor, Inc., n02l1618c1a-ds Datasheet
n02l1618c1a-ds
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n02l1618c1a-ds Summary of contents
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... PH: 408-935-7777, FAX: 408-935-7770 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview The N02L1618C1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as AMI’ ...
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... G I Pin BGA (top (DOC# 14-02-012 REV C ECN# 01-1274) N02L1618C1A I I ...
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... When LB only is in the select mode only I I/O are affected as shown Symbol Test Condition 0V MHz 0V MHz, T I/O IN (DOC# 14-02-012 REV C ECN# 01-1274) N02L1618C1A Input/ Output I/O - I/O Mux 0 and Buffers I/O - I/O 8 MODE POWER 2 Standby Standby 2 Standby Standby ...
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... C, VCC = 2 1.2V Chip Disabled =25°C and are not 100% tested. A (DOC# 14-02-012 REV C ECN# 01-1274) N02L1618C1A Rating Unit –0 +0 –0.3 to 3.0 V 500 mW o –40 to 125 C o - 10sec(Lead only) ...
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... SRAMs. The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com Open page ... Word 1 Word 2 (DOC# 14-02-012 REV C ECN# 01-1274) N02L1618C1A Word 16 5 ...
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... LBW UBW WHZ (DOC# 14-02-012 REV C ECN# 01-1274) N02L1618C1A 0. 5ns 0 30pF 1.65 - 2.2V o -40 to +85 C 70ns Units Min. Max ...
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... The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com OLZ LBLZ, UBLZ (DOC# 14-02-012 REV C ECN# 01-1274) N02L1618C1A Data Valid OHZ t t LBHZ, UBHZ Data Valid 7 ...
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... The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com LBW UBW WHZ LBW UBW WHZ (DOC# 14-02-012 REV C ECN# 01-1274) N02L1618C1A Data Valid t OW High Data Valid High-Z 8 ...
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... DETAIL B 0.20 0.00 Note: 1. All dimensions in inches (Millimeters) 2. Package dimensions exclude molding flash The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com. 18.41±0.13 11.76±0.20 0.45 0.30 1.10±0.15 0.80mm REF (DOC# 14-02-012 REV C ECN# 01-1274) N02L1618C1A SEE DETAIL ...
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... PRIMARY DATUM Z AND SEATING PLANE ARE DEFINED BY THE e SPHERICAL CROWNS OF THE SOLDER BALLS BALL PAD CORNER I. MARKED BY INK 0.75 BALL MATRIX TYPE 0.375 1.125 1.375 FULL (DOC# 14-02-012 REV C ECN# 01-1274) N02L1618C1A 1. 0.35±0.05 DIA. 2. SEATING PLANE - Z 0. ...
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... AMI Semiconductor, Inc. Ordering Information N02L1618C1AX-XX X Revision History Revision # Date A Apr. 2003 B Nov. 2005 C September 2006 © 2006 AMI Semiconductor, Inc. All rights reserved. AMI Semiconductor, Inc. ("AMIS") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. ...