p2204nd5g Niko Semiconductor Co., Ltd., p2204nd5g Datasheet
p2204nd5g
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p2204nd5g Summary of contents
Page 1
... 250 GS(th -250 0V ±20V GSS P2204ND5G Halogens Free & Lead Free G : GATE D : DRAIN S : SOURCE N-Channel P-Channel UNITS 40 -40 DS ±20 ± - -55 to 150 ...
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... DYNAMIC C iss N-Channel 10V 1MHz oss P-Channel -10V 1MHz N- rss N-Channel 0. (BR)DSS 10A D Q P-Channel gs 2 P2204ND5G TO-252-5 Halogens Free & Lead Free P-Ch ±100 N- °C N-Ch 10 P-Ch - °C J N-Ch 60 P-Ch - N-Ch 25 P-Ch ...
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... SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T 1 Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2 Independent of operating temperature. REMARK: THE PRODUCT MARKED WITH “P2204ND5G”, DATE CODE or LOT # Rev 1.3 Effect Transistor -10V, DS (BR)DSS ...
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... N- & P-Channel Enhancement Mode Field N-CHANNEL Rev 1.3 Effect Transistor Body Diode Forward Voltage Variation with Source Current and Temperature 100 0.1 0.01 0.001 0 0.2 0 Body Diode Forward Voltage( P2204ND5G TO-252-5 Halogens Free & Lead Free T = 125°C A 25°C -55°C 0.6 0.8 1.0 1.2 1.4 Jul-10-2009 ...
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... C/W θJC 4.Single Puls e 0.1 0.1 1 Rev 1.3 Effect Transistor 200 180 160 140 120 100us 100 10m 0.0001 10 100 5 P2204ND5G TO-252-5 Halogens Free & Lead Free SINGLE PULSE R = 6˚ C/W θJC T =25˚ 0.001 0.01 0.1 1 Jul-10-2009 10 ...
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... N- & P-Channel Enhancement Mode Field P-CHANNEL Rev 1.3 Effect Transistor Body Diode Forward Voltage Variation with Source Current and Temperature 100 125°C 1 0.1 0.01 0.001 0 0 Body Diode Forward Voltage( P2204ND5G TO-252-5 Halogens Free & Lead Free A -55°C 25°C 0.4 0.6 0.8 1.0 1.2 1.4 Jul-10-2009 ...
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... Rev 1.3 Effect Transistor 200 180 160 140 120 100us 100 80 1ms 60 10m 100 0.0001 1.E-04 1.E-03 7 P2204ND5G TO-252-5 Halogens Free & Lead Free SINGLE PULSE R =6˚ C/W θJC T =25˚ 0.001 0.01 0.1 1 Note 1.Duty cycle ℃/W 2.R = thJC 3 P*R (t) ...
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... NIKO-SEM N- & P-Channel Enhancement Mode Field TO-252-5 (DPAK) MECHANICAL DATA Dimension Min. A 9.0 B 2.1 C 0.4 D 1.1 E 0.4 F 0.00 G 5.3 Rev 1.3 Effect Transistor mm Dimension Typ. Max. 9.5 10.0 H 2.3 2.5 I 0.5 0.6 J 1.2 1.3 K 0.5 0.6 L 0.3 M 5.5 5 P2204ND5G TO-252-5 Halogens Free & Lead Free mm Min. Typ. Max. 1.3 1.5 1.7 6.3 6.5 6.7 4.8 5.0 5.2 0.8 1.3 1.8 0.3 0.5 0.7 1.1 1.3 1.5 K Jul-10-2009 ...