c458pb Silicon Power Corporation, c458pb Datasheet
c458pb
Manufacturer Part Number
c458pb
Description
C458 53mm / 1400v / 2000arms / 35us
Manufacturer
Silicon Power Corporation
Datasheet
1.C458PB.pdf
(2 pages)
Type C458 reverse blocking thyristor is suitable for inverter applications. The silicon junction is
manufactured by the all-diffused process and utilizes the field-proven, interdigitated amplifying gate
structure. It is supplied in an industry accepted disc-type package, ready to mount using commercially
available heat dissipators and mechanical clamping hardware.
ON-STATE CHARACTERISTICS
THERMAL IMPEDANCE
175 GREAT VALLEY PKWY.
53mm / 1400V / 2000Arms / 35us
INVERTER THYRISTO R
S S S S S
ILICON
P P P P P
OWER
C458
USA
C O
C O
C O
C O
C O
MALVERN,
RPORATION
MODEL
C458PD
C458PB
C458P
Gate Drive Requirements:
External Clamping Force
PA 19355
MECHANICAL OUTLINE
D
20 V / 20 ohms / 0.5us risetime
5 - 10 us minimum duration
5000 - 6000 lbs.
24.5 - 26.7 kN
A A A A A
C L
B B B B B = 1.90 in (48.3 mm)
D= 1.07 in (27.2 mm)
D= 1.07 in (27.2 mm)
D= 1.07 in (27.2 mm)
D= 1.07 in (27.2 mm)
D= 1.07 in (27.2 mm)
V
0 to +125
1400
1200
1000
DRM
= 1.90 in (48.3 mm)
= 1.90 in (48.3 mm)
= 1.90 in (48.3 mm)
= 1.90 in (48.3 mm)
= 2.96 in (75.2 mm)
= 2.96 in (75.2 mm)
= 2.96 in (75.2 mm)
= 2.96 in (75.2 mm)
= 2.96 in (75.2 mm)
A Ø
C L
/ V
B Ø
B Ø
RRM
volts
o
C
J
1300
1100
900
-40
@
o
2 0° ±5 °
C
8/10/2000
Related parts for c458pb
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Sdd303 Is Designed Specifically For High Current Surges As Appropriate For Pulse Power Applications.
Manufacturer:
Silicon Power Corporation
Datasheet:
Part Number:
Description:
Power Semiconductor Half-bridge Module
Manufacturer:
Silicon Power Corporation
Datasheet:
Part Number:
Description:
Power Semiconductor Half-bridge Module Data Sheet Rev 0 - 02/06/09
Manufacturer:
Silicon Power Corporation
Datasheet:
Part Number:
Description:
Silicon N-channel IGBT intelligent power module for high power switching, motor control applications
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Silicon N-channel IGBT GTR module for high power switching, motor control applications
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Silicon N-channel IGBT GTR module for high power switching, motor control applications
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Silicon N Channel IGBT(High Power Switching Applications Motor Control Applications)
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Silicon NPN Triple Diffused Type(High Power Switching / Motor Control Applications)
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Silicon Pnp Epitaxial Planer Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Pnp Epitaxial Planer Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Npn Epitaxial Planer Type For Low-frequency Output Amplification
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Npn Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Npn Epitaxial Type High-speed Switching Applications
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Silicon P Channel Mos Type U-mosiii
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Silicon N-channel Mos Type U-mos V-h
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
c458pb Summary of contents
Page 1
... It is supplied in an industry accepted disc-type package, ready to mount using commercially available heat dissipators and mechanical clamping hardware. ON-STATE CHARACTERISTICS THERMAL IMPEDANCE 175 GREAT VALLEY PKWY. C458 MODEL C458PD C458PB C458P ...
Page 2
SPCO LIMITING CHARACTERISTICS TEST PARAMETER SYMBOL CONDITIONS Repetitive peak off -40 DRM RRM J state & reverse to +125 voltage Off-state & reverse 125 DRM RRM j current Peak half cycle I ...