c450ez400-0213-2 Cree, Inc., c450ez400-0213-2 Datasheet

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c450ez400-0213-2

Manufacturer Part Number
c450ez400-0213-2
Description
Cree Ez400? Gen Ii Led
Manufacturer
Cree, Inc.
Datasheet
Cree
Data Sheet
CxxxEZ400-Sxxx00-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs.
The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these
LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method.
These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips
are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications,
such as general illumination, automotive lighting and LCD backlighting.
FEATURES
● Dielectric Passivation Across Epi Surface
CxxxEZ400-Sxxx00 Chip Diagram
Dielectric Passivation
EZBright Power Chip LED Rf Performance
– 90 mW min. @ 150 mA – 450 & 460 nm
– 75 mW min. @ 150 mA - 470 nm
– 25 mW min. @ 150 mA - 527 nm
Lambertian Radiation
Conductive Epoxy, Solder Paste or Preforms,
or Flux Eutectic Attach
Low Forward Voltage – 3.5 V Typical at 150 mA
Single Wire Bond Structure
Maximum DC Forward Current - 200 mA
Top View
®
EZ400™ Gen II LED
Gold Bond Pad
112 μm
EZBright LED Chip
380 x 380 μm
Backside
Metallization
Subject to change without notice.
2
www.cree.com
Bottom View
APPLICATIONS
General Illumination
– Automobile
– Aircraft
– Decorative Lighting
– Task Lighting
– Outdoor Illumination
White LEDs
Crosswalk Signals
Television Backlighting
t = 170 μm
Die Cross Section
Anode (+);
3 μm AuSn
Cathode (-)
1

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c450ez400-0213-2 Summary of contents

Page 1

Cree EZ400™ Gen II LED ® Data Sheet CxxxEZ400-Sxxx00-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications, such as general illumination, automotive lighting and LCD backlighting. FEATURES • EZBright Power Chip LED Rf Performance – min. @ 150 mA – 450 & 460 nm – min. @ 150 mA - 470 nm – min. @ 150 mA - 527 nm ...

Page 2

... Maximum Ratings 25°C Note Forward Current Peak Forward Current LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Typical Electrical/Optical Characteristics at T Part Number Forward Voltage (V Min. C450EZ400-Sxxx00-2 3.1 C460EZ400-Sxxx00-2 3.1 C470EZ400-Sxxx00-2 3.1 C527EZ400-Sxxx00-2 3.2 Mechanical Specifications Description P-N Junction Area (µm) Chip Area (µm) Chip Thickness (µm) Top Au Bond Pad Diameter (µm) Au Bond Pad Thickness (µm) Back Contact Metal Area (µm) Back Contact Metal Thickness (µ ...

Page 3

... Standard Bins for CxxxEZ400-Sxxx00-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ400-Sxxx00-2) orders may be filled with any or all bins (CxxxEZ400-0xxx-2) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are 150 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. C450EZ400-0213-2 120 mW C450EZ400-0209-2 105 mW C450EZ400-0205-2 ...

Page 4

Characteristic Curves These are representative measurements for the EZBright400. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs. Forward Voltage 200 175 150 125 100 (V) Relative Intensity vs. Forward Current 150% Relative Intensity vs. Forward Current 150% 125% 125% 100% 100% ...

Page 5

Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip. Copyright © 2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ400 are trademarks of Cree, Inc. 5 CPR3ED Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com ...

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