p480ccp083 Excelics Semiconductor, Inc., p480ccp083 Datasheet
p480ccp083
Manufacturer Part Number
p480ccp083
Description
High Efficiency Heterojunction Power Fet
Manufacturer
Excelics Semiconductor, Inc.
Datasheet
1.P480CCP083.pdf
(2 pages)
PRELIMINARY DATA SHEET
High Efficiency Heterojunction Power FET
ELECTRICAL CHARACTERISTICS (T
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25
Note: 1. Exceeding any of the above ratings may result in permanent damage.
SYMBOLS
SYMBOLS
P
G
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
1dB
1dB
NON-HERMETIC SURFACE MOUNT 160MIL METAL
CERAMIC PACKAGE
+35.5dBm TYPICAL OUTPUT POWER
17.5dB TYPICAL POWER GAIN AT 2GHz
0.4 X 4800 MICRON RECESSED
Si
ADVANCED EPITAXIAL HETEROJUNCTION
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
“MUSHROOM” GATE
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
3
2. Exceeding any of the above ratings may reduce MTTF below design goals.
N
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
4
PASSIVATION
Excelics
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage Igd=4.8mA
Source Breakdown Voltage Igs=4.8mA
Thermal Resistance (Au-Sn Eutectic Attach)
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
PARAMETERS
PARAMETERS/TEST CONDITIONS
O
C
Vds=3V, Vgs=0V
Vds=3V, Ids=14mA
Vds=3V, Vgs=0V
ABSOLUTE
a
12V
-8V
Idss
240mA
33dBm
175
-65/175
11.4 W
= 25
o
C
f=2GHz
f= 2GHz
f= 4GHz
f= 2GHz
f= 4GHz
O
o
C)
C
EPA480C-CP083
1
MIN
34.0
16.0
880
960
-11
-7
CONTINUOUS
All Dimensions In Mils
Tolerance 3
8V
-3V
1.2A
40mA
@ 3dB Compression
150
-65/150
9.5 W
o
C
TYP
1440
1560
35.5
35.5
17.5
12.5
-1.0
12*
-15
-14
47
o
C
MAX
1880
-2.5
2
UNIT
o
dBm
mA
C/W
mS
dB
%
V
V
V
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p480ccp083 Summary of contents
Page 1
... Total Power Dissipation Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EPA480C-CP083 ...
Page 2
PRILIMINARY DATA SHEET High Efficiency Heterojunction Power FET FREQ --- S11 --- (GHz) MAG 0.5 0.927 -152.0 13.045 1.0 0.935 -175.5 6.698 1.5 0.865 2.0 0.855 2.5 0.840 3.0 0.824 3.5 0.800 4.0 0.773 4.5 0.759 5.0 0.757 5.5 0.765 ...