mcf51mm256 Freescale Semiconductor, Inc, mcf51mm256 Datasheet - Page 18

• Manufacturer Part Number: mcf51mm256
• Description: 32-bit Coldfire V1 Central Processor Unit
• Manufacturer: Freescale Semiconductor, Inc

Preliminary Electrical Characteristics
Solving
where K is a constant pertaining to the particular part. K can be determined from
P
solving
3.4
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage.
All ESD testing is in conformity with CDF-AEC-Q00 Stress Test Qualification for Automotive Grade
Integrated Circuits. (http://www.aecouncil.com/) This device was qualified to AEC-Q100 Rev E.
A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the
device specification requirements. Complete dc parametric and functional testing is performed per the
applicable device specification at room temperature followed by hot temperature, unless specified
otherwise in the device specification.
18
D
(at equilibrium) for a known T
#
1
2
3
4
Equation 1
Human Body
Machine
Latch-up
Equation 1
ESD Protection Characteristics
Human Body Model (HBM)
Machine Model (MM)
Charge Device Model (CDM)
Latch-up Current at T
Model
and
and
Series Resistance
Storage Capacitance
Number of Pulse per pin
Series Resistance
Storage Capacitance
Number of Pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Equation 2
Equation 2
Table 8. ESD and Latch-Up Protection Characteristics
A
Rating
= 125°C
Table 7. ESD and Latch-up Test Conditions
K = P
A
iteratively for any value of T
. Using this value of K, the values of P
for K gives:
D
Description
× (T
A
+ 273°C) + θ
Symbol
JA
V
V
V
I
HBM
CDM
LAT
MM
× (P
D
A
)
.
2
±2000
±200
±500
±100
Min
Symbol
R1
R1
—
—
—
—
C
C
D
and T
Equation 3
Max
—
—
—
—
J
Value
1500
–2.5
100
200
7.5
can be obtained by
Freescale Semiconductor
3
0
3
Unit
mA
V
V
V
by measuring
Unit
pF
pF
—
—
Ω
Ω
V
V
C
T
T
T
T
Eqn. 3