tpd4135ak TOSHIBA Semiconductor CORPORATION, tpd4135ak Datasheet - Page 12

• Manufacturer Part Number: tpd4135ak
• Description: High Voltage Monolithic Silicon Power Ic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Description of Protection Function
Timing Chart of Under voltage protection and SD Function
Safe Operating Area
Note 1: The above safe operating areas are Tj = 135 °C (Figure 1).
SD
LIN
HIN
V
V
LO
HO
DIAG
BS
CC
Note: The above timing chart is considering the delay time.
(2) Thermal shutdown
(3) SD pin
(1)
2.7
3
0
0
When the V
the IGBT is turned on again by the input signal.
This product incorporates a thermal shutdown circuit to protect itself against the abnormal state
when its temperature rises excessively. When the temperature of this chip rises to the internal setting
TSD due to external causes or internal heat generation, all IGBT outputs shut down regardless of the
input. This protection function has hysteresis ΔTSD (=50°C typ.). When the chip temperature falls to
TSD − ΔTSD, the chip is automatically restored and the IGBT is turned on again by the input.
Because the chip contains just one temperature detection location, when the chip heats up due to the
IGBT, for example, the differences in distance from the detection location in the IGBT (the source of
the heat) cause differences in the time taken for shutdown to occur. Therefore, the temperature of the
chip may rise higher than the thermal shutdown temperature when the circuit started to operate.
SD pin is the input signal pin to shut down the internal output IGBT. Output of all IGBT is shut down
after delay times (2 μs typ.) when "L" signal is input to the SD pin from external circuit (MCU etc.). It
is possible to shut down IC when overcurrent and others is detected by external circuit. Shut down
state is released by all of IC input signal "L". At open state of SD pin, shut down function can not
operate.
Power supply voltage V
Under voltage protection
This product incorporates under voltage protection circuits to prevent the IGBT from operating in
unsaturated mode when the V
to this product internal setting V
input. This protection function has hysteresis. When the V
the shutdown voltage (V
is turned on again by the input. DIAG output is reversed at the time of V
When the V
supply voltage drops V
Figure 1 SOA at Tj = 135 °C
t
on
BS
CC
t
off
supply voltage reaches 0.5 V higher than the shutdown voltage (V
power supply is less than 7 V, DIAG output isn't sometimes reversed. When the V
BB
400
BS
t
(V)
on
CC
450
UVD (=9 V typ.), the high-side IGBT output shuts down.
UVR (=11.5 V typ.)), this product is automatically restored and the IGBT
t
CC
off
CC
voltage or the V
UVD (=11 V typ.), all IGBT outputs shut down regardless of the
12
BS
voltage drops. When the V
CC
power supply reaches 0.5 V higher than
CC
under-voltage protection.
CC
BS
UVR (=9.5 V typ.)),
TPD4135AK
power supply falls
2010-09-27
BS