tpd4120ak TOSHIBA Semiconductor CORPORATION, tpd4120ak Datasheet - Page 12

• Manufacturer Part Number: tpd4120ak
• Description: Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Description of Protection Function
Timing Chart of Under voltage protection and SD Function
Safe Operating Area
Note 1: The above safe operating areas are Tj = 135 °C (Figure 1).
SD
LIN
HIN
V
V
LO
HO
DIAG
BS
CC
1.9
Note: The above timing chart is considering the delay time
2
0
(1) Under voltage protection
(2) Thermal shutdown
(3) SD pin
0
Power supply voltage V
Figure 1 SOA at Tj = 135 °C
This product incorporates under voltage protection circuits to prevent the IGBT from operating in
unsaturated mode when the V
When the V
outputs shut down regardless of the input. This protection function has hysteresis. When the V
power supply reaches 0.5 V higher than the shutdown voltage (V
automatically restored and the IGBT is turned on again by the input. DIAG output is reversed at the
time of V
sometimes reversed.
When the V
When the V
the IGBT is turned on again by the input signal.
This product incorporates a thermal shutdown circuit to protect itself against the abnormal state
when its temperature rises excessively.
When the temperature of this chip rises to the internal setting TSD due to external causes or internal
heat generation, all IGBT outputs shut down regardless of the input. This protection function has
hysteresis ΔTSD (=50 °C typ.). When the chip temperature falls to TSD − ΔTSD, the chip is
automatically restored and the IGBT is turned on again by the input.
Because the chip contains just one temperature detection location, when the chip heats up due to the
IGBT, for example, the differences in distance from the detection location in the IGBT (the source of
the heat) cause differences in the time taken for shutdown to occur. Therefore, the temperature of the
chip may rise higher than the thermal shutdown temperature when the circuit started to operate.
SD pin is the input signal pin to shut down the internal output IGBT. Output of all IGBT is shut down
after delay times (2 μs typ.) when "L" signal is inputted to the SD pin from external circuit (MCU etc.).
It is possible to shut down IC when overcurrent and others is detected by external circuit. Shut down
state is released by all of IC input signal "L". At open state of SD pin, shut down function can not
operate.
t
on
CC
BS
BS
CC
under-voltage protection. When the V
t
off
supply voltage drops V
supply voltage reaches 0.5 V higher than the shutdown voltage (V
power supply falls to this product internal setting V
BB
400
(V)
t
on
450
CC
t
off
voltage or the V
BS
UVD (=9 V typ.), the high-side IGBT output shuts down.
12
BS
CC
voltage drops.
power supply is less than 7 V, DIAG output isn't
CC
UVR (=11.5 V typ.)), this product is
CC
UVD (=11 V typ.), all IGBT
BS
UVR (=9.5 V typ.)),
TPD4120AK
2008-05-16
CC