unr7231 Panasonic Corporation of North America, unr7231 Datasheet
unr7231
Manufacturer Part Number
unr7231
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNR7231.pdf
(3 pages)
Transistors with built-in Resistor
UNR7231
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
■ Absolute Maximum Ratings T
Note) * : Printed circuit board: Copper foil area of 1 cm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2004
• High forward current transfer ratio h
• Costs can be reduced through downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input resistance
Resistance ratio
Transition frequency
reduction of the number of parts.
2. * : Pulse measurement
board thickness of 1.7 mm for the collector portion
Parameter
Parameter
*
*
(UN7231)
*
a
Symbol
Symbol
V
= 25°C ± 3°C
R
V
V
V
V
I
I
I
T
CE(sat)
h
I
CBO
FE
P
CEO
EBO
R
1
I
T
f
CBO
CEO
CBO
CEO
a
CP
FE
/R
C
stg
T
T
1
j
= 25°C
2
−55 to +150
Rating
I
I
V
V
V
V
I
V
2
150
C
C
C
Note) The part number in the parenthesis shows conventional part number.
0.7
1.5
1.0
20
20
CB
CE
EB
CE
CB
or more, and the
= 10 µA, I
= 1 mA, I
= 500 mA, I
SJH00032BED
= 20 V, I
= 15 V, I
= 15 V, I
= 14 V, I
= 10 V, I
B
Conditions
Unit
E
E
°C
°C
W
B
C
C
E
V
V
A
A
= 0
= 0
= −20 mA, f = 200 MHz
B
= 0
= 0
= 0
= 150 mA
= 5 mA
Marking Symbol: IC
Internal Connection
0.4
1.5
±0.08
±0.1
3˚
1
3.0
4.5
1.6
0.016
(47 kΩ)
±0.15
Min
±0.1
±0.2
B
800
0.7
20
20
2
0.5
R
R
1
±0.08
2
(1 kΩ)
3
0.021
Typ
1.0
55
45˚
MiniP3-F1 Package
0.025
2 100
Max
1.5
0.5
0.4
1.3
10
1
±0.1
0.4
C
E
1: Base
2: Collector
3: Emitter
±0.04
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
1
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unr7231 Summary of contents
Page 1
... Transistors with built-in Resistor UNR7231 (UN7231) Silicon NPN epitaxial planar type For low-frequency amplification ■ Features • High forward current transfer ratio h • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) ...
Page 2
... UNR7231 1.6 2 Copper foil area of 1cm or more and thickness of 1.7mm for the collector portion. 1.2 0.8 0 120 160 ( °C ) Ambient temperature T a 400 = 000 = 75°C 1 600 T a 25°C 1 200 −25°C 800 400 0 −2 − ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...