unr111l Panasonic Corporation of North America, unr111l Datasheet - Page 12
unr111l
Manufacturer Part Number
unr111l
Description
Silicon Pnp Epitaxial Planer Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNR111L.pdf
(14 pages)
UNR111x Series
12
Characteristics charts of UNR111H
Characteristics charts of UNR111L
−120
−100
−240
−200
−160
−120
−80
−60
−40
−20
−80
−40
6
5
4
3
2
1
0
0
0
−1
0
0
Collector-emitter voltage V
Collector-emitter voltage V
Collector-base voltage V
– 2
−2
C
– 4
−4
I
I
C
C
ob
V
V
V
−10
– 6
−6
CE
CE
CB
– 8
−8
I
B
I
f = 1 MHz
I
T
B
= − 0.5 mA
T
E
T
a
= −1.0 mA
CB
a
a
= 0
= 25°C
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
− 0.4 mA
− 0.2 mA
= 25°C
− 0.8 mA
− 0.6 mA
= 25°C
−10
–10
CE
CE
(V)
( V )
( V )
−100
−12
–12
− 0.01
−0.01
−100
−100
− 0.01
−100
− 0.1
− 0.1
−0.1
−10
−10
−10
−1
−1
−1
− 0.1
−1
−1
Collector current I
Collector current I
Output current I
SJH00001BED
V
V
−10
25°C
−10
−1
V
CE(sat)
CE(sat)
T
T
−25°C
25°C
IN
a
a
= 75°C
= 75°C
I
I
I
−25°C
−100
−100
O
−10
O
C
C
C
V
T
C
( mA )
I
I
a
O
( mA )
( mA )
C
C
= 25°C
= − 0.2 V
/ I
/ I
B
B
= 10
= 10
−1 000
−1 000
−100
240
200
160
120
240
200
160
120
80
40
80
40
0
−0.1
0
−1
Collector current I
Collector current I
25°C
T
−10
−1
a
h
h
= 75°C
FE
FE
−25°C
I
I
T
25°C
a
= 75°C
−100
C
C
−10
C
C
V
V
−25°C
CE
( mA )
CE
( mA )
= −10 V
= −10 V
−1 000
−100