unr32a8g Panasonic Corporation of North America, unr32a8g Datasheet
unr32a8g
Manufacturer Part Number
unr32a8g
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNR32A8G.pdf
(4 pages)
Transistors with built-in Resistor
UNR32A8G
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
• Suitable for high-density mounting downsizing of the equipment
• Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Parameter
Parameter
This product complies with the RoHS Directive (EU 2002/95/EC).
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
R
P
CBO
I
T
V
V
CEO
a
I
I
I
V
stg
V
C
1
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
= 25°C
CBO
CEO
FE
OH
OL
/ R
T
1
2
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
100
125
CB
CE
EB
CE
CC
CC
CB
50
50
80
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJH00186AED
= 50 V, I
= 6 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
E
Conditions
Unit
B
B
B
mW
B
C
E
E
mA
= 0
= 0
°C
°C
= 0
V
V
= 5 mA
= 0.3 mA
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= −2 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
■ Package
■ Internal Connection
• Code
• Marking Symbol: HF
• Pin Name
SSSMini3-F2
1: Base
2: Emitter
3: Collector
(5.1 kΩ)
−30%
B
0.08
R
Min
4.9
50
50
20
R
1
2
(0.51 kΩ)
0.51
0.10
Typ
150
+30%
Max
0.25
0.12
0.1
0.5
2.0
0.2
C
E
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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