unr32a8g Panasonic Corporation of North America, unr32a8g Datasheet
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unr32a8g
Manufacturer Part Number
unr32a8g
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNR32A8G.pdf
(4 pages)
Transistors with built-in Resistor
UNR32A8G
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
• Suitable for high-density mounting downsizing of the equipment
• Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Parameter
Parameter
This product complies with the RoHS Directive (EU 2002/95/EC).
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
R
P
CBO
I
T
V
V
CEO
a
I
I
I
V
stg
V
C
1
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
= 25°C
CBO
CEO
FE
OH
OL
/ R
T
1
2
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
100
125
CB
CE
EB
CE
CC
CC
CB
50
50
80
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJH00186AED
= 50 V, I
= 6 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
E
Conditions
Unit
B
B
B
mW
B
C
E
E
mA
= 0
= 0
°C
°C
= 0
V
V
= 5 mA
= 0.3 mA
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= −2 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
■ Package
■ Internal Connection
• Code
• Marking Symbol: HF
• Pin Name
SSSMini3-F2
1: Base
2: Emitter
3: Collector
(5.1 kΩ)
−30%
B
0.08
R
Min
4.9
50
50
20
R
1
2
(0.51 kΩ)
0.51
0.10
Typ
150
+30%
Max
0.25
0.12
0.1
0.5
2.0
0.2
C
E
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1