unr5215g Panasonic Corporation of North America, unr5215g Datasheet - Page 3

• Manufacturer Part Number: unr5215g
• Description: Transistor With Builtin Resistors
• Manufacturer: Panasonic Corporation of North America

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■ Electrical Characteristics (continued) T
Resistance UNR521MG
ratio
Common characteristics chart
Characteristics charts of UNR5210G
240
200
160
120
60
50
40
30
20
10
80
40
0
0
0
0
Collector-emitter voltage V
Ambient temperature T
2
UNR521NG
UNR5218G/5219G
UNR521ZG
UNR5214G
UNR521TG
UNR521FG
UNR521VG
UNR5211G/5212G/5213G/521LG
UNR521KG
UNR521EG
UNR521DG
Parameter
I
40
B
= 1.0 mA
0.3 mA
4
I
P
0.9 mA
C
T
 V
0.8 mA
 T
80
6
0.7 mA
CE
0.6 mA
a
8
0.5 mA
This product complies with the RoHS Directive (EU 2002/95/EC).
120
T
0.4 mA
a
a
= 25°C
CE
( °C )
10
0.1 mA
( V )
160
12
Symbol
R
1
/R
2
10
10
10
10
−1
−2
1
10
2
−1
−25°C
Collector current I
a
SJH00218AED
= 25°C ± 3°C
V
1
CE(sat)
25°C
Conditions
 I
10
C
T
C
a
I
( mA )
C
= 75°C
/ I
B
= 10
10
2
400
300
200
100
0
0.08
0.17
0.37
1.70
1.70
Min
1
0.8
3.7
UNR521xG Series
Collector current I
0.047
0.10
0.21
0.21
0.47
0.47
2.13
2.14
Typ
0.1
1.0
1.0
4.7
10
h
FE
 I
Max
0.12
0.25
0.57
2.60
2.60
1.2
5.7
T
C
a
10
= 75°C
C
2
−25°C
V
25°C
( mA )
CE
= 10 V
Unit

10
3
3