msb92awt1 ON Semiconductor, msb92awt1 Datasheet - Page 2

• Manufacturer Part Number: msb92awt1
• Description: Pnp Transistor Silicon General Purpose High Voltage Transistor
• Manufacturer: ON Semiconductor

2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
ELECTRICAL CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter−Base Cutoff Current
DC Current Gain (Note 2)
Collector-Emitter Saturation Voltage (Note 2)
Base−Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Collector−Base Capacitance
(I
(I
(I
(V
(V
MSB92WT1: (V
MSB92AWT1: (V
(I
(I
(I
(V
C
C
E
C
C
C
CB
EB
CB
= −100 mAdc, I
= −1.0 mAdc, I
= −100 mAdc, I
= −20 mAdc, I
= −20 mAdc, I
= −10 mAdc, V
= −3.0 Vdc, I
= −200 Vdc, I
= −20 Vdc, I
(V
(V
CE
CE
CE
CE
B
B
E
E
B
E
B
CE
E
= −2.0 mAdc)
= −2.0 mAdc)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 0)
= 0)
= −10 Vdc, I
= −10 Vdc, I
= −10 Vdc, I
= −10 Vdc, I
= 0)
= −20 Vdc, f = 20 MHz)
Characteristic
C
C
C
C
= −1.0 mAdc)
= −1.0 mAdc)
= −10 mAdc)
= −30 mAdc)
MSB92WT1, MSB92AWT1
http://onsemi.com
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
h
h
h
h
CE(sat)
BE(sat)
C
CBO
EBO
FE1
FE1
FE2
FE3
f
T
cb
−300
−300
−5.0
Min
120
25
40
25
50
−
−
−
−
−
−0.25
Max
−0.1
−0.5
−0.9
200
6.0
−
−
−
−
−
−
−
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
mA
mA
pF
−