bf776 Infineon Technologies Corporation, bf776 Datasheet - Page 2

• Manufacturer Part Number: bf776
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
C
C
CE
CB
EB
= 1 mA, I
= 30 mA, V
= 0.5 V, I
= 13 V, V
= 5 V, I
B
E
= 0
C
= 0
CE
BE
= 0
= 3 V, pulse measured
= 0
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
110
4
-
-
-
Values
typ.
180
4.5
-
-
-
max.
2007-04-20
100
270
30
3
-
BF776
Unit
V
µA
nA
µA
-