nss20601cf8 ON Semiconductor, nss20601cf8 Datasheet - Page 2

• Manufacturer Part Number: nss20601cf8
• Description: 20 V, 8.0 A, Low Vce Sat Npn Transistor Transistor Chipfet?
• Manufacturer: ON Semiconductor

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
Collector-Base Breakdown Voltage
(I
Emitter-Base Breakdown Voltage
(I
Collector Cutoff Current
(V
Emitter Cutoff Current
(V
DC Current Gain (Note 3)
(I
(I
(I
(I
(I
Collector-Emitter Saturation Voltage (Note 3)
(I
(I
(I
(I
(I
(I
Base-Emitter Saturation Voltage (Note 3)
(I
Base-Emitter Turn-on Voltage (Note 3)
(I
Cutoff Frequency
(I
Input Capacitance (V
Output Capacitance (V
Delay (V
Rise (V
Storage (V
Fall (V
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
CB
EB
= 0.1 mAdc, I
= 3.0 A, I
= 4.0 A, I
= 10 mAdc, I
= 0.1 mAdc, I
= 10 mA, V
= 500 mA, V
= 1.0 A, V
= 2.0 A, V
= 3.0 A, V
= 0.1 A, I
= 1.0 A, I
= 1.0 A, I
= 2.0 A, I
= 1.0 A, I
= 2.0 A, V
= 100 mA, V
= 20 Vdc, I
= 6.0 Vdc)
CC
CC
CC
= 15 V, I
= 15 V, I
CC
= 15 V, I
B
B
B
B
B
B
B
CE
CE
CE
CE
= 0.010 A)
= 0.100 A)
= 0.010 A)
= 0.030 A)
= 0.400 A)
= 0.01 A)
= 15 V, I
= 0.020 A)
CE
CE
CE
B
E
= 2.0 V)
= 2.0 V)
= 2.0 V)
= 2.0 V)
E
C
= 2.0 V)
= 0)
C
= 0)
= 0)
= 0)
= 2.0 V)
= 5.0 V, f = 100 MHz)
C
= 750 mA, I
C
= 750 mA, I
EB
= 750 mA, I
C
CB
= 0.5 V, f = 1.0 MHz)
= 750 mA, I
= 3.0 V, f = 1.0 MHz)
Characteristic
B1
B1
B1
= 15 mA)
= 15 mA)
B1
= 15 mA)
= 15 mA)
(T
A
= 25°C unless otherwise noted)
NSS20601CF8T1G
http://onsemi.com
2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
Cobo
CE(sat)
I
I
BE(sat)
Cibo
BE(on)
h
CBO
EBO
f
t
t
FE
t
t
T
d
s
r
f
Min
200
200
200
200
200
140
6.0
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typical
0.007
0.031
0.060
0.090
0.760
0.720
0.110
0.110
365
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.010
0.065
0.080
0.110
0.130
0.130
0.900
0.900
1100
Max
100
130
850
130
110
0.1
0.1
-
-
-
-
-
-
-
-
-
mAdc
mAdc
Unit
MHz
Vdc
Vdc
Vdc
pF
pF
ns
ns
ns
ns
V
V
V