dn3525 Supertex, Inc., dn3525 Datasheet

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dn3525

Manufacturer Part Number
dn3525
Description
N-channel Depletion-mode Vertical Dmos Fets
Manufacturer
Supertex, Inc.
Datasheet

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Part Number:
dn3525N8-G
0
Features
Applications
-G indicates package is RoHS compliant (‘Green’)
Notes:
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
BV
BV
250V
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Normally-on switches
Solid state relays
Converters
Constant current sources
Power supply circuits
Telecom
1
DSX
DGX
Same as SOT-89.
/
R
(max)
6.0Ω
DS(ON)
N-Channel Depletion-Mode Vertical DMOS FETs
300mA
(min)
I
DSS
Package Options
DN3525N8-G
TO-243AA
DN3525N8
-55
O
C to +150
1
300
Value
BV
BV
±20V
DGX
DSX
O
O
C
C
General Description
The Supertex DN3525 is a low threshold depletion-mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coeffi cient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Pin Confi guration
where
Product marking for TO-243AA:
G
= 2-week alpha date code
TO-243AA
(top view)
DN5C
D
D
S
DN3525

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dn3525 Summary of contents

Page 1

... All voltages are referenced to device ground. *Distance of 1.6mm from case for 10 seconds. General Description The Supertex DN3525 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device ...

Page 2

... mmho V = 10V 150mA DS D 350 V = -5.0V 25V 1.0MHz 25V 150mA 25Ω, 25 GEN -10V -5.0V -5.0V PULSE GENERATOR R GEN INPUT DN3525 1 I DRM 1. -5. 150mA = 150mA OUTPUT D.U.T. ...

Page 3

... =125 C A 0.8 0.4 0.0 0.8 1.0 1 0.8 0.6 0.4 0.2 100 1000 3 Saturation Characteristics (Volts) DS Power Dissipation vs. Ambient Temperature TO-243AA 100 125 Thermal Response Characteristics TO-243AA 1. 0.001 0.01 0 (seconds) p DN3525 -0.5V -0.8V -1V -1.5V -2V 10 150 10 ...

Page 4

... I (Amperes and R w/ Temperature GS(OFF) DS(ON) 1.3 1.2 1 1mA, 15V GS(OFF) 1.0 0.9 0.8 0 0V, 200mA DS(on) 0.6 0.5 0.4 -50 - 100 125 150 Gate Drive Dynamic Characteristics 200mA =30V 1000 2000 3000 4000 Q (picocoulombs) G DN3525 1.2 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 5000 ...

Page 5

... BSC 3.00 BSC Top View (The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-DN3525 A012307 1.50 ± 0.10 0.40 ± 0.05 2.21 ± 0.08 0.5 ± 0.06 Side View Notes: All dimensions are in millimeters ...

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