ssp7200n SeCoS Halbleitertechnologie GmbH, ssp7200n Datasheet - Page 2

• Manufacturer Part Number: ssp7200n
• Description: 3 A, 200 V, Rds On 400 M N-channel Enhancement Mosfet
• Manufacturer: SeCoS Halbleitertechnologie GmbH

http://www.SeCoSGmbH.com/
30-Jul-2010 Rev. A
ELECTRICAL CHARACTERISTICS
Notes
a.
b.
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
Elektronische Bauelemente
PARAMETER
A
A
A
SYMBO MIN TYP MAX UNIT
R
Td
V
Td
(T
I
I
I
D(ON)
DS(ON)
V
Q
g
Q
GS(th)
Q
GSS
DSS
T
T
(OFF)
A
FS
SD
(ON)
gs
gd
r
=25°C unless otherwise specified)
g
f
Dynamic
Static
40
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.7
40
15
15
10
54
26
b
3
5
-
-
-
-
-
-
-
N-Channel Enhancement MOSFET
±
400
450
100
1
5
-
-
-
-
-
-
-
-
-
-
-
3 A, 200 V, R
mΩ
nA
μA
nC
nS
V
A
S
V
SSP7200N
Any changes of specification will not be informed individually.
V
V
V
V
V
V
V
V
I
I
V
V
I
V
R
S
D
D
DS
DS
DS
DS
DS
GS
GS
DS
DS
GS
GEN
= 2.3A, V
= 6A
= 1A, V
L
TEST CONDITIONS
= 6Ω
= 15V,
= 15V
= 10V, I
= 4.5V, I
= 4.5V
DS(ON)
= V
= 0V, V
= 160V, V
= 160V, V
= 5V, V
= 10V
GS
DD
, I
400 m
,
I
D
GS
GS
GS
D
= 15V
D
D
= 3A
= 3A
= 250μA
= 0V
= 12V
= 10V
= 2.8A
GS
GS
= 0V
= 0V,T
J
=55
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°C