FRS9240H Intersil Corporation, FRS9240H Datasheet

FRS9240H

Manufacturer Part Number

FRS9240H

Description

7a, -200v, 0.735 Ohm, Rad Hard, P-channel Power Mosfets

Manufacturer

Intersil Corporation

Datasheet

1.FRS9240H.pdf (6 pages)

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June 1998

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• 7A, -200V, RDS(on) = 0.735

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

• Gamma Dot

• Photo Current

• Neutron

Description

Intersil has designed a series of SECOND GENERATION hardened power MOS-

FETs of both N and P channel enhancement types with ratings from 100V to 500V,

1A to 60A, and on resistance as low as 25m . Total dose hardness is offered at

100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm

for 500V product to 1E14n/cm

DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power ﬁeld- effect transistor

of the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEU) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.

Reliability screening is available as either non TX (commercial), TX equivalent of

MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of

MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for

any desired deviations from the data sheet.

Absolute Maximum Ratings

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain-Gate Voltage (RGS = 20k ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Maximum Power Dissipation

Inductive Current, Clamped, L = 100 H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG

Lead Temperature (During Soldering)

TC = +25

TC = +100

TC = +25

TC = +100

Derated Above +25

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

- Meets Pre-Rad Speciﬁcations to 100KRAD(Si)

- Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- Survives 2E12 Typically If Current Limited to IDM

- 5.0nA Per-RAD(Si)/sec Typically

- Pre-RAD Speciﬁcations for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

for 100V product. Dose rate hardness (GAMMA

(TC = +25

Intersil Corporation 1999

C) Unless Otherwise Speciﬁed

FRS9240D, FRS9240R,

4-1

7A, -200V, 0.735 Ohm, Rad Hard,

)

P-Channel Power MOSFETs

Package

Symbol

CAUTION: Beryllia Warning per MIL-S-19500

FRS9240H

FRS9240D, R, H

refer to package speciﬁcations.

-55 to +150

-200

0.60

300

TO-257AA

File Number

UNITS

3265.2

Related parts for FRS9240H

FRS9240H Summary of contents

Page 1

... CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. | http://www.intersil.com or 407-727-9207 Copyright FRS9240D, FRS9240R, 7A, -200V, 0.735 Ohm, Rad Hard Unless Otherwise Speciﬁed © Intersil Corporation 1999 4-1 FRS9240H P-Channel Power MOSFETs Package TO-257AA D G CAUTION: Beryllia Warning per MIL-S-19500 refer to package speciﬁcations. Symbol ...

Page 2

... Diode Forward Voltage Reverse Recovery Time Junction-To-Case Junction-To-Ambient -12V FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FRS9240D, FRS9240R, FRS9240H +25 C, Unless Otherwise Speciﬁed SYMBOL TEST CONDITIONS BVDSS VGS = 1mA VGS(th) VDS = VGS 1mA IGSSF VGS = -20V ...

Page 3

... FRS9240D, FRS9240R, FRS9240H Electrical Speciﬁcations TC = +25 PARAMETER Drain-Source (Note 4, 6) Breakdown Volts (Note 5, 6) Gate-Source (Note 4, 6) Threshold Volts (Note Gate-Body (Note 4, 6) Leakage Forward (Note 5, 6) Gate-Body (Note Leakage Reverse (Note Zero-Gate Voltage (Note 4, 6) Drain Current ...

Page 4

... Typical Performance Characteristics FRS9240D, FRS9240R, FRS9240H 4-4 ...

Page 5

... FRS9240D, FRS9240R, FRS9240H Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. Rad Hard TXV Equivalent - Standard Data Package A. Certiﬁcate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet G ...

Page 6

... FRS9240D, FRS9240R, FRS9240H TO-257AA 3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE Ø 0.065 R TYP BERYLLIA WARNING PER MIL-S-19500 Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ ...

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