SST39VF800 Silicon Storage Technology, Inc., SST39VF800 Datasheet
SST39VF800
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SST39VF800 Summary of contents
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... The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF800Q/VF800 write (Program or Erase) with a 2.7-3.6V power supply. The SST39VF800Q/ VF800 conform to JEDEC standard pinouts for x16 memories. Featuring high performance word program, the SST39VF800Q/VF800 devices provide a typical word program time of 14 µ ...
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... Data# Polling ( When the SST39VF800Q/VF800 are in the internal Pro- gram operation, any attempt to read DQ complement of the true data. Once the Program operation is completed, DQ will produce true data. The device is ...
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... V (2.7-3.6V 3.0V-only system should be tied to a 5.0V±10% (4.5-5.5V) power supply The mixed voltage system environment where flash memory RC has to be interfaced with 5V system chips. The V not offered on the SST39VF800, instead Connect pin ...
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... A9 A13 2 A8 A12 3 A14 4 A15 5 A16 343 ILL2.3 TFBGA BALL 4 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information 8,388,608 bit EEPROM Cell Array Y-Decoder DDQ 343 ILL B1 Standard Pinout 40 39 Top View ...
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... To activate the device when CE# is low. To gate the data output buffers. To control the write operations. To provide 3-volt supply (2.7-3.6V) Supplies power for input/output buffers. It should be either tied to V (2.7 - 3.6V) for 3V I 5.0V (4.5 - 5.5V) power supply to support 5V I/O. (Not offered on SST39VF800 device, instead NC) Unconnected pins. OE# WE ...
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... Care” for Command sequence 15 8 Notes for Software ID Entry Command Sequence 1. With A -A =0; SST Manufacturer Code = 00BFH, is read with SST39VF800Q/VF800 Device Code = 2781H, is read with A 2. The device does not remain in Software Product ID Mode if powered down CFI ABLE UERY DENTIFICATION ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information ABLE YSTEM NTERFACE NFORMATION Address Data Data 1BH 0027H V DQ7-DQ4: Volts, DQ3-DQ0: millivolts 1CH 0036H V DQ7-DQ4: Volts, DQ3-DQ0: millivolts 1DH 0000H V 1EH 0000H V 1FH 0004H Typical time out for Word Program 2 20H 0000H Typical time out for min ...
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... Surface Mount Lead Soldering Temperature (3 Seconds) ............................................................................... 240°C (1) ................................................................................................................................................................. Output Short Circuit Current (1) Note: Outputs shorted for no more than one second. No more than one output shorted at a time. (2) The absolute maximum stress ratings for SST39VF800 are referenced PERATING ANGE Range Ambient Temp Commercial 0 ° ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information ABLE PERATING HARACTERISTICS Symbol Parameter I Power Supply Current DD Read Program and Erase I Standby V Current Auto Low Power Current ALP I Input Leakage Current LI I Output Leakage Current LO V Input Low Voltage IL V Input Low Voltage (CMOS) ...
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... AC CHARACTERISTICS T 12: SST39VF800Q/VF800 R ABLE Symbol Parameter T Read Cycle time RC T Chip Enable Access Time CE T Address Access Time AA T Output Enable Access Time OE (1) T CE# Low to Active Output CLZ (1) T OE# Low to Active Output OLZ (1) T CE# High to High-Z Output CHZ (1) T OE# High to High-Z Output ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information ADDRESS A 18-0 CE# OE WE# HIGH IGURE EAD YCLE IMING IAGRAM 5555 ADDRESS OE# CE# DQ 15-0 XXAA SW0 IGURE ONTROLLED ROGRAM © 1999 Silicon Storage Technology, Inc ...
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... T CPH XX55 XXA0 DATA SW1 SW2 WORD (ADDR/DATA YCLE IMING IAGRAM OEH T OE DATA# IAGRAM 12 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information INTERNAL PROGRAM OPERATION STARTS 343 ILL5.0 T OES DATA# DATA 343 ILL6.1 343-04 2/99 ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information ADDRESS A 18-0 CE# OE# WE IGURE OGGLE IT IMING IAGRAM 5555 ADDRESS A 18-0 CE# OE WE# DQ 7-0 AA SW0 Note: The device also supports CE# controlled chip erase operation. The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 13) ...
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... RASE IMING IAGRAM SIX-BYTE CODE FOR SECTOR ERASE 2AAA 5555 5555 2AAA SW1 SW2 SW3 SW4 RASE IMING IAGRAM 14 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information SW5 343 ILL17 SW5 343 ILL18.0 343-04 2/99 ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information THREE-BYTE SEQUENCE FOR SOFTWARE ID ENTRY ADDRESS A 14-0 5555 2AAA CE# OE WE# DQ 15-0 XXAA SW0 F 11 IGURE OFTWARE NTRY AND THREE-BYTE SEQUENCE FOR CFI QUERY ENTRY ADDRESS A 14-0 5555 2AAA CE# OE WE# DQ 15-0 XXAA SW0 F 12: CFI Q ...
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... SOFTWARE ID EXIT AND RESET 5555 ADDRESS A 14-0 DQ 7-0 AA CE# OE WE# SW0 F 13 /CFI E IGURE OFTWARE XIT © 1999 Silicon Storage Technology, Inc. 2AAA 5555 IDA T WHP SW1 SW2 XIT 16 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information 343 ILL10.0 343-04 2/99 ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information V IHT INPUT V ILT AC test inputs are driven at V (2.4 V) for a logic “1” and V IHT inputs and outputs are V (2.0 V) and 14 IGURE NPUT UTPUT EFERENCE TO DUT F 15 IGURE EST ...
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... F 16 IGURE ORD ROGRAM LGORITHM © 1999 Silicon Storage Technology, Inc. 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Start Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: A0 Address: 5555 Load Word Address/Word Data Wait for end of Program ( Data# Polling ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information Internal Timer Program/Erase Initiated Wait SCE Program/Erase Completed F 17 IGURE AIT PTIONS © 1999 Silicon Storage Technology, Inc. Toggle Bit Program/Erase Initiated Read word Read same No word No Does DQ 6 match? ...
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... Write data: XX90 Write data: XXF0 Address: 5555 Address: 5555 Wait T IDA Wait T IDA Return to normal Read Software ID operation F OMMAND LOWCHARTS 20 8 Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information Command Sequence Write data: XXF0 Address: XX Wait T IDA Return to normal operation 343 ILL15.0 343-04 2/99 ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information Chip Erase Command Sequence Write data: XXAA Address: 5555 Write data: XX55 Address: 2AAA Write data: XX80 Address: 5555 Write data: XXAA Address: 5555 Write data: XX55 Address: 2AAA Write data: XX10 Address: 5555 ...
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... U = Unencapsulated die Temperature Range C = Commercial = 0° to 70° Industrial = -40° to 85°C Minimum Endurance 4 = 10,000 cycles Read Access Speed ns Version Voltage V = 2.7-3.6V SST39VF800Q-90-4C-U1 SST39VF800-90-4C- Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information pin for I/O power supply DDQ 343-04 2/99 ...
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... Megabit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information PACKAGING DIAGRAMS 1.10 0.90 0.70 0.50 Note: 1. Complies with JEDEC publication 95 MO-142 DD dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in metric (min/max). 3. Coplanarity: 0.1 (±.05) mm. 48 EAD HIN MALL UTLINE ACKAGE SST ACKAGE ...