ba779-2-v-gh Vishay, ba779-2-v-gh Datasheet - Page 2

• Manufacturer Part Number: ba779-2-v-gh
• Description: Rf Pin Diodes - Dual Series
• Manufacturer: Vishay

BA779-2-V-GH
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
amb
amb
Figure 2. Differential Forward Resistance vs. Forward Current
Forward voltage
Reverse current
Diode capacitance
Differential forward resistance
Reverse impedance
Minority carrier lifetime
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
95 9734
Figure 1. Forward Current vs. Forward Voltage
10 000
Parameter
95 9735
1000
0.01
100
100
0.1
10
10
1
0.001
1
0
T
amb
[e-mail], [e-mail],
= 25 °C
f > 20 MHz
T
0.4
j
For technical questions within your region, please contact one of the following:
0.01
= 25 °C
I
F
V
- Forward Current (mA)
F
- Forward Voltage (V)
0.8
Scattering Limit
0.1
f = 100 MHz, I
I
F
f = 100 MHz, V
f = 100 MHz, V
1.2
= 10 mA, I
Test condition
I
V
F
1
R
= 20 mA
1.6
= 30 V
R
F
= 10 mA
= 1.5 mA
R
R
2.0
10
= 0
= 0
Symbol
C
V
I
z
Figure 3. Typ. Cross Modulation Distortion vs. Frequency f
r
τ
R
F
D
f
r
95 9733
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- 20
- 40
- 60
- 80
20
0
f
0
2
Min.
, modulated with 200 kHz, m = 100 % (MHz)
5
Π
- Circuit with 10 dB Attenuation
20
f
1
= 100 MHz unmodulated
V
Typ.
0
4
= 40 dBmV
40
Document Number 83322
60
Max.
1000
0.5
50
50
Rev. 1.0, 22-Apr-10
80
Unit
mV
nA
pF
kΩ
µs
Ω
2