t1200ta25a westcode, t1200ta25a Datasheet

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t1200ta25a

Manufacturer Part Number
t1200ta25a
Description
Insulated Gate Bi-polar Transistor
Manufacturer
westcode
Datasheet
V
V
V
I
I
I
I
P
(di/dt)
T
T
Absolute Maximum Ratings
Notes: -
1) Unless otherwise indicated T
2) T
3) T
4) Maximum commutation loop inductance 1µH.
Provisional Data Sheet T1200TA25A Issue 2
C(DC)
CRM
F(DC)
FRM
WESTCODE
An IXYS Company
j
stg
CES
DC link
GES
MAX
cr
sink
sink
= 55°C, double side cooled.
= 25°C, double side cooled.
Insulated Gate Bi-Polar Transistor
VOLTAGE RATINGS
Collector – emitter voltage
Permanent DC voltage for FIT 100 failure rate.
Peak gate – emitter voltage
RATINGS
Continuous DC collector current, IGBT (Note 2).
Repetitive peak collector current, t
Continuous DC forward current, Diode (note 2).
Repetitive peak forward current, t
Maximum power dissipation, IGBT (note 3).
Critical diode di/dt (note 4)
Operating temperature range.
Storage temperature range.
(Development Type Number: TX033TA25A)
Type T1200TA25A
j
= 125ºC.
p
Provisional data
p
=1ms, Diode.
=1ms, IGBT.
Page 1 of 8
Date:- 27 Aug, 2002
Data Sheet Issue:- 2
MAXIMUM
MAXIMUM
-40 to +125
-40 to +125
LIMITS
LIMITS
2500
1250
1141
2400
2400
1600
±20
909
5.9
UNITS
UNITS
August, 2002
A/µs
kW
°C
°C
V
V
V
A
A
A
A

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t1200ta25a Summary of contents

Page 1

... Notes Unless otherwise indicated 55°C, double side cooled. sink 25°C, double side cooled. sink 4) Maximum commutation loop inductance 1µH. Provisional Data Sheet T1200TA25A Issue 2 Provisional data Type T1200TA25A =1ms, IGBT. p =1ms, Diode 125ºC. j Page Date:- 27 Aug, 2002 ...

Page 2

... MIN TYP MAX - - 1.2 ° =125 C. j Page Insulated Gate Bi-Polar Transistor Type T1200TA25A TEST CONDITIONS I = 1200A 15V 25° 1200A 15V C GE Current range: 500A – 1600A 200mA CES ±20V ...

Page 3

... V = 12V 10V GE 600 400 200 Collector to emitter saturation voltage-V Provisional Data Sheet T1200TA25A Issue 2 Insulated Gate Bi-Polar Transistor Type T1200TA25A Figure 2 – Typical output characteristic at 25°C 1600 1400 1200 T =125°C j 1000 800 600 400 200 T1200TA25A ...

Page 4

... I =1200A C I =600A Gate resistance - R Provisional Data Sheet T1200TA25A Issue 2 Insulated Gate Bi-Polar Transistor Type T1200TA25A Figure 6 – Typical turn-on delay time vs gate resistance 7 V =1250V CE V =±15V GE T =125° =1200A ...

Page 5

... GE T =125°C 1400 j 1200 1000 800 600 400 200 0 0 500 1000 Collector-emitter voltage - V Provisional Data Sheet T1200TA25A Issue 2 Insulated Gate Bi-Polar Transistor Type T1200TA25A Figure 10 – Typical turn-off energy vs. collector current 1500 R 1000 I =1200A C 500 I =600A C T1200TA25A issue 2 0 ...

Page 6

... T =25°C 600 j 500 400 300 200 100 0 500 1000 1500 Commutation rate - di/dt (A/µs) Provisional Data Sheet T1200TA25A Issue 2 Insulated Gate Bi-Polar Transistor Type T1200TA25A Figure 14 – Typical recovered charge 1000 I =1200A F 900 800 T =125°C j 700 600 500 400 ...

Page 7

... Figure 17– Transient thermal impedance (IGBT) 0.1 0.01 0.001 0.0001 0.00001 0.00001 0.0001 Figure 18 – Transient thermal impedance (Diode) 1 0.1 0.01 0.001 0.0001 0.00001 0.00001 0.0001 Provisional Data Sheet T1200TA25A Issue 2 Insulated Gate Bi-Polar Transistor Type T1200TA25A 0.001 0.01 0.1 Time (s) 0.001 0.01 0.1 Time (s) Page Emitter Collector Double side T1200TA25A issue 2 1 ...

Page 8

... In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Provisional Data Sheet T1200TA25A Issue 2 Insulated Gate Bi-Polar Transistor Type T1200TA25A (Please quote 10 digit code as below ...

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