t8719va Vishay, t8719va Datasheet
t8719va
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t8719va Summary of contents
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... Specification of GaAlAs IR Emitting Diode Chip - 21594 DESCRIPTION T8719VA is an infrared, 870 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only ...
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... T8719VA Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER Forward voltage (2) Radiant power (3) Radiant intensity Radiant power (epoxy encapsulated) (4) Radiant power chip Temperature coefficient of radiant power Reverse voltage Temperature coefficient of forward voltage Angle of half intensity Peak wavelength Spectral bandwidth Rise time/fall time Notes ( °C, unless otherwise specified ...
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... Document Number: 81996 For technical questions, contact: Rev. 1.0, 19-May-09 Specification of GaAlAs IR Emitting Diode Chip SYMBOL MIN 0.425 x 0.425 (1) optochipsupport@vishay.com T8719VA Vishay Semiconductors TYP. MAX. UNIT 0. 0.16 mm 0.14 mm Aluminum Gold alloy Sawing Epoxy bonding www.vishay.com ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...