fs4435 Fortune Semiconductor Corporation, fs4435 Datasheet - Page 4

• Manufacturer Part Number: fs4435
• Description: Single P-channel Enhancement Mode Power Mosfet
• Manufacturer: Fortune Semiconductor Corporation

6.
7.
Electrical Characteristics @T
Static Characteristics
BV
R
V
I
I
Diode Characteristics
V
t
Q
Dynamic Characteristics
R
C
C
C
t
t
t
t
Gate Charge Characteristics
Q
Q
Q
Q
Notes：
1. Pulse width ≦ 300us, duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing
Rev. 1.4
DSS
GSS
rr
d
r
d
f
Symbol
Rthj-a
GS(th)
SD
(on)
(off)
DS(ON)
G
iss
oss
rss
rr
g
g
gs
gd
(10V)
(4.5V)
DSS
1
Thermal Data
Electrical Characteristics
Symbol
1
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Rise Time
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Thermal Resistance Junction-ambient
2
Parameter
2
j
= 25℃ ( unless otherwise specified )
j
j
= 25℃)
= 55℃)
Parameter
2
Test Conditions
V
V
V
V
V
V
V
I
I
μ s
VGS=VDS=0V,F=1MHz
V
Frequency=1MHz
V
R
V
I
SD
SD
DS
DS
GS
GS
GS
DS
DS
GS
GS
GS
GS
G
=-1A,V
=-10A,dI
=-11A
=3Ω ,R
= V
=0V,V
=-10V,V
=-10V,V
=-30V V
=-30V V
= 0V, I
= -10V, I
= -5V, I
= ±25V V
GS
, I
GS
DS
L
D
D
=1.5Ω ,
SD
D
= -250uA
=-15V
DS
DS
=0V
= -250uA
GS
GS
D
=
/dt=100A/
=-15V,
=-15V,
DS
=
-5A
= 0V
= 0V
-10A
=0V
Max. 75
-30
-
-
-1
-
-
-
1
Min.
Value
-
19
27
-1.7
-
-
-
-0.75
25
12
5.8
1130
240
155
8.7
8.5
18
7
18
9.5
5.5
3.3
Typ.
℃/W
-
25
36
-3
-1
-5
±100
-1.0
30
8
1400
24
Max.
FS4435
Unit
Units
mΩ
mΩ
4/6
uA
uA
nA
nC
pF
nC
ns
ns
Ω
V
V
V