tlp261j TOSHIBA Semiconductor CORPORATION, tlp261j Datasheet - Page 3

• Manufacturer Part Number: tlp261j
• Description: Toshiba Photocoupler Gaas Ired + Photo Triac
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Individual Electrical Characteristics
Coupled Electrical Characteristics
Coupled Electrical Characteristics
Fig. 1: dv / dt test circuit
Trigger LED current
Inhibit voltage
Leakage in inhibited state
Turn-on time
Capacitance (input to output)
Isolation resistance
Isolation voltage
V
CC
Forward voltage
Reverse current
Capacitance
Peak off − state current
Peak on − state voltage
Holding current
Critical rate of rise
of off − state voltage
Critical rate of rise
of commutating voltage
+
−
Characteristic
Characteristic
Characteristic
120 Ω
R
in
3
1
6
4
dv / dt(c)
Symbol
Symbol
Symbol
dv / dt
I
V
BV
DRM
V
R
t
V
I
C
R
V
C
I
ON
I
I
FT
TM
IH
in
4 kΩ
R
H
IH
L
F
T
S
S
S
(Ta = 25°C)
(Ta = 25°C)
~
(Ta = 25°C)
V
I
V
V = 0, f = 1 MH
I
V
V
V
I
I
V
V
V
V
I
AC, 1 minute
AC, 1 second, in oil
AC, 1 minute, in oil
F
TM
F
F
F
T
R
DRM
in
in
T
D
S
S
= 10 mA
= Rated I
= Rated I
= rated I
= Rated V
= 3 V
= 5 V
= 0, f = 1 MH
= 500 V, R.H. ≤ 60%
= 240 Vrms, Ta = 85°C (Fig. 1)
= 60 Vrms, I
= 3 → 1.5 V, R
= 70 mA
3
= 600 V
Test Condition
Test Condition
Test Condition
FT
FT
FT
DRM
× 1.5
dv/dt(c)
Z
T
―
Z
= 15 mA (Fig. 1)
L
= 20 Ω
dv/dt
5 V, V
0 V
CC
5×10
3000
Min
200
Min
Min
1.0
―
―
―
―
―
―
―
―
―
―
―
―
―
10
5000
5000
Typ.
Typ.
Typ.
1.15
10
500
200
1.7
0.6
0.2
0.8
30
10
30
―
―
―
―
14
2005-02-22
1000
TLP261J
Max
Max
Max
600
100
1.3
2.8
10
10
20
―
―
―
―
―
―
―
―
―
V
V/μs
V/μs
Unit
Unit
Unit
Vdc
mA
mA
μ s
μA
μA
pF
nA
pF
Ω
rms
V
V
V