s12nf30l STMicroelectronics, s12nf30l Datasheet - Page 4

• Manufacturer Part Number: s12nf30l
• Description: N - Channel 30v - 0.0085w - 12a So-8 Stripfet Power Mosfet
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
Table 5.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
t
g
t
t
C
I
I
C
r(Voff)
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
t
oss
t
t
t
iss
rss
c
gs
gd
r
f
f
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Off-voltage rise time
fall time
cross-over time
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
Parameter
Parameter
DS
Parameter
= 0)
GS
= 0)
I
V
V
V
V
V
V
V
V
= 0
V
V
(see Figure 13)
D
DS
DS
GS
DS
GS
GS
DS
DS
DD
GS
= 250 µA, V
V
R
(see Figure 12)
V
R
4.5V
(see Figure 12)
V
R
(see Figure 14)
=Max rating,T
= Max rating
= ± 16V
= V
= 10V, I
= 4.5V, I
= 25V, f = 1 MHz, V
= 15V
= 4.5V
DD
DD
DD
Test conditions
= 24V, I
G
G
G
Test conditions
=4.7Ω, V
=4.7Ω, V
Test conditions
= 4.7Ω, V
=15 V, I
=24V, I
GS
= 15V, I
, I
,
I
D
D
D
D
D
=6A
= 6A
GS
= 250µA
= 12A,
D
= 6A
D
GS
D
=12A,
GS
=6A,
GS
= 0
C
= 6A,
= 4.5V
=4.5V
=125°C
=
GS
Min.
Min.
Min.
30
1
2400
Typ.
Typ.
0.008
590
200
Typ.
15
35
18
0.01
35
90
80
35
35
35
80
9
STS12NF30L
Max.
Max.
0.009
0.011
50
Max.
±100
10
1
Unit
Unit
nC
nC
nC
Unit
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
S
µA
µA
nA
V
V
Ω
Ω