ss8117 Silicon Standard Corporation, ss8117 Datasheet - Page 2
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ss8117
Manufacturer Part Number
ss8117
Description
1a Adjustable Low-dropout Regulator
Manufacturer
Silicon Standard Corporation
Datasheet
1.SS8117.pdf
(6 pages)
5/26/2005 Rev.2.2
ABSOLUTE MAXIMUM RATINGS
OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
Input Voltage………………………………………………………………………………………….…7V
Power Dissipation Internally Limited
Maximum Junction Temperature…...…………………………………………………………….…..150°C
Storage Temperature Range…..……………………………………….................…………..-65°C
Reflow Temperature (soldering, 10secs)
SOT 223 Pac kage…….……………………………………………………….....…..…………....260°C
Continuous Power Dissipation (T
SOT 223
Note
(V
Temperature Range…………………………………………………………...............….……..-40°C
Operating Conditions: V
Reference Voltage
Line Regulation
Load Regulation
Dropout Voltage
Current Limit
Adjust Pin Current Change
Minimum Load Current
Quiescent Current
Ripple Rejection
Thermal Regulation
Temperature Stability
RMS Output Noise (% of V
Thermal Resistance,Junction-to-Ambient
(No heat sink; No air flow)
Thermal Shutdown
Thermal Shutdown Hysteresis
Note 1:
Note 2:
Note3:
Note4:
IN
-V
(1)
: See Recommended Minimum Footprint
ADJ
) Voltage………..……………………………………………….......……………….……2.5V~6.5V
Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Conditions
are conditions under which the device functions but the specifications might not be guaranteed. For guaran-
teed specifications and test conditions see the Electrical Characteristics.
The maximum power dissipation is a function of the maximum junction temperature, T
sis tance,
perature is T
will go into thermal shutdown. For the SS8117G in SOT 223 package,
minimum footprint). For safe operation in SOT 223 package, see “Typical Performance Characte ristics” (Safe
Operating Area).
Low duty cycle pulse techniques are used during test to maintain junction te mperature as close to
ambient temperature as possible.
The output capacitor should be tantalum or aluminum .
(1)
PARAMETER
……………………...……………………………………………………………………..0.8W
JA
, and ambient temperature T
jmax
OUT
-T
IN
)
A
/
6.5V, TJ = 25°C unless otherwise specified. [Note3]
JA
. If this dissipation is exceeded, the die temperature will rise above 150°C and the IC
A
= +25°C)
V
(V
(V
(V
V
1.5V < (V
V
f = 120Hz, C
(V
T
V
T
SOT-223; Recommended Minimum Footprint
Junction Temperature
V
A
A
V
IN
IN
IN
IN
OUT
IN
IN
IN
= 25°C, 30ms pulse
= 25°C, 10Hz < f < 10kHz, I
OUT
OUT
www.SiliconStandard.com
- V
- V
= 4V, I
- V
- V
- V
- V
+ 1.5V)
OUT
OUT
= 2%, I
= 2%, I
OUT
OUT
OUT
OUT
IN
O
= 2V, I
= 2V, 10mA < I
) = 2V
= 2V
) = 2V, 10mA < I
) = 3V, I
- V
=10mA
OUT
OUT
OUT
OUT
A
V
= 10µF Tantalum,
. The maximum allowable power dissipation at any ambient te m-
(Note 2)
OUT
= 800mA
= 1A
CONDITIONS
IN
) < 5.25V
OUT
< 6.5V, I
= 10mA
(Note 1)
= 800mA
OUT
(Note 1)
OUT
OUT
< 1mA
LOAD
< 800mA
= 10mA
= 10mA
JA
is 156°C/W (See recommended
1.225
MIN
1000
10
1.250
0.004
0.007
TYP
1200
0.15
1.32
0.04
0.3
156
150
1.2
1.3
80
50
10
Jmax
T
, total thermal re-
T
J
MAX
J
1.275
0.02
1.3
+150°C
1.4
85°C
SS8117G
UNITS
%/W
°C/W
µA
mA
mA
µA
dB
°C
°C
%
%
%
%
V
V
V
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