BT136S-SERIES NXP Semiconductors, BT136S-SERIES Datasheet - Page 2
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BT136S-SERIES
Manufacturer Part Number
BT136S-SERIES
Description
Bt136s Series Triacs
Manufacturer
NXP Semiconductors
Datasheet
1.BT136S-SERIES.pdf
(6 pages)
Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
June 2001
Triacs
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
dV
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-mb
th j-a
D
com
/dt
/dt
Thermal resistance
junction to mounting base half cycle
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
full cycle
pcb (FR4) mounted; footprint as in Fig.14
CONDITIONS
V
V
V
I
V
V
T
V
T
CONDITIONS
BT136S (or BT136M)-
V
T
waveform; gate open
circuit
V
I
dI
open circuit
I
I
T
T(RMS)
TM
G
j
j
j
D
D
D
D
D
D
DM
DM
com
= 5 A
= 125 ˚C
= 125 ˚C
= 125 ˚C; exponential
= 0.1 A; dI
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 6 A; V
= 67% V
= 400 V; T
/dt = 1.8 A/ms; gate
= 4 A;
DRM(max)
D
T
GT
GT
T
G
T
DRM(max)
= V
= 0.1 A
= 0.1 A
;
/dt = 5 A/ s
= 0.1 A
= 0.1 A
= 0.1 A;
j
BT136S-
= 95 ˚C;
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
2
DRM(max)
;
;
MIN.
0.25
-
-
-
-
-
-
-
-
-
-
-
-
100
...
-
-
TYP.
MIN.
1.4
0.7
0.4
0.1
11
30
16
5
8
7
5
7
5
...F
50
MIN.
-
-
-
-
-
35
35
35
70
20
30
20
30
15
...
MAX.
TYP.
TYP.
1.70
250
1.5
0.5
75
50
BT136S series
2
-
-
-
Product specification
...F
25
25
25
70
20
30
20
30
15
MAX.
MAX.
3.0
3.7
-
-
-
-
Rev 1.300
UNIT
UNIT
UNIT
V/ s
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
s