irfp4232 International Rectifier Corp., irfp4232 Datasheet - Page 5

• Manufacturer Part Number: irfp4232
• Description: Pdp Mosfet
• Manufacturer: International Rectifier Corp.

www.irf.com
Fig 15. Threshold Voltage vs. Temperature
600
500
400
300
200
100
Fig 13. On-Resistance Vs. Gate Voltage
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
0
4.0
-75 -50 -25
0.0001
T J = 125°C
0.001
0.01
0.1
1
1E-006
V GS , Gate-to-Source Voltage (V)
D = 0.50
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
T J , Temperature ( °C )
6.0
0
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
25
T J = 25°C
50
75
1E-005
8.0
I D = 250µA
100 125 150 175
I D = 42A
10.0
t 1 , Rectangular Pulse Duration (sec)
0.0001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
Fig 14. Maximum Avalanche Energy Vs. Temperature
i/Ri
R
1
R
1
τ
2
R
τ
0.001
2
2
R
2
1000
200
160
120
800
600
400
200
Fig 16. Typical Repetitive peak Current vs.
80
40
0
R
0
τ
3
3
R
τ
25
25
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
R
4
Starting T J , Junction Temperature (°C)
τ
4
R
4
50
50
4
τ
C
τ
Case temperature
Ri (°C/W)
Case Temperature (°C)
0.01
IRFP4232PbF
0.0091
0.0487
0.1264
0.1660
75
75
100
100
0.024564
0.000003
0.000071
0.001743
τi (sec)
ton= 1µs
Duty cycle = 0.25
TOP
BOTTOM
Half Sine Wave
Square Pulse
125
125
0.1
18A
12A
42A
150
150
I D
5
175
175