irfb7416 International Rectifier Corp., irfb7416 Datasheet - Page 2

• Manufacturer Part Number: irfb7416
• Description: Hexfet Power Mosfet
• Manufacturer: International Rectifier Corp.

IRF7416
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
V
t
Q
R
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
SM
S
rr
GSS
d(on)
r
d(off)
f
DSS
V
(BR)DSS
DS(on)
GS(th)
fs
SD
iss
oss
rss
rr
g
gs
gd
Repetitive rating; pulse width limited by
Starting T
(BR)DSS
R
max. junction temperature. ( See fig. 11 )
G
= 25 , I
/ T
J
J
= 25°C, L = 25mH
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Leakage Current
AS
Gate-to-Source Reverse Leakage
= -5.6A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Pulse width
I
T
Min. Typ. Max. Units
Min. Typ. Max. Units
SD
Surface mounted on FR-4 board, t
–––
––– -0.024 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-1.0
–––
–––
––– 1700 –––
-30
5.6
J
150°C
-5.6A, di/dt
–––
–––
–––
––– -100
410
–––
––– 0.020
––– 0.035
–––
–––
–––
–––
–––
890
8.0
22
18
56
99
61
49
59
60
-1.0
-3.1
-45
150
–––
–––
–––
-1.0
100
–––
–––
–––
–––
–––
–––
300µs; duty cycle
-25
85
92
12
32
100A/µs, V
V/°C
nC
nC
µA
ns
pF
ns
nA
V
V
V
S
A
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
DD
= -5.6A
= -5.6A
= 25°C, I
= 25°C, I
= 6.2
= 2.7
= V
= -10V, I
= -24V, V
= -24V, V
= -24V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V, See Fig. 6 and 9
= -15V
= 0V
2%.
V
GS
(BR)DSS
, I
10sec.
D
See Fig. 10
S
F
D
Conditions
= -250µA
D
D
= -5.6A, V
= -5.6A
D
GS
GS
= -250µA
= -5.6A
= -2.8A
,
= -2.8A
= 0V
= 0V, T
Conditions
D
= -1mA
GS
J
= 125°C
= 0V
G
S
D