irfz46n International Rectifier Corp., irfz46n Datasheet - Page 2

• Manufacturer Part Number: irfz46n
• Description: 55v Single N-channel Hexfet Power Mosfet In A To-220ab Package
• Manufacturer: International Rectifier Corp.

Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

‚
ƒ
Notes:
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
E
L
L
I
I
V
t
Q
t
DSS
GSS
d(on)
r
SM
d(off)
f
S
rr
on
V
2
fs
D
S
(BR)DSS
GS(th)
AS
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
I
T
(BR)DSS
R
max. junction temperature. ( See fig. 11 ).
Starting T
SD
J
G
= 25 , I
175°C.
28A di/d
/ T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 389 H
AS
= 28A. (See Figure 12).
220A/µs, V

Parameter
Parameter
DD
V
(BR)DSS
J
,
‚
= 25°C (unless otherwise specified)
„
…
†
‡
Pulse width
This is a typical value at device destruction and represents
This is a calculated value limited to T
Calculated continuous current based on maximum allowable
operation outside rated limits.
–––
–––
–––
junction temperature. Package limitation current is 39A.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 583… 152†
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
–––
–––
–––
55
19
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.057 –––
1696 –––
–––
–––
––– -100
110
–––
–––
–––
–––
–––
–––
–––
–––
407
–––
–––
–––
208
4.5
14
76
52
57
67
7.5
16.5
–––
100
–––
180
400µs; duty cycle
–––
–––
250
–––
–––
–––
–––
–––
–––
101
312
4.0
1.3
53
25
72
11
26
V/°C
m
nA
nC
ns
mJ
nC
µA
nH
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
AS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
J
J
G
= 28A
= 28A
= 25°C, I
= 25°C, I
= 28A, L = 389 H
= 12
= 0V, I
= 25V, I
= 55V, V
= 44V, V
= 44V
= 10V, See Fig. 6 and 13
= 28V
= 10V, See Fig. 10 „
= 25V
= 10V, I
= V
= 20V
= -20V
= 0V
2%.
GS
J
, I
= 175°C.
D
S
F
D
D
D
= 250µA
Conditions
GS
GS
= 28A
= 28A, V
Conditions
= 28A„
= 28A „
= 250µA
„
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 150°C
= 0V
G
G
„
S
+L
D
S
D
)
S
D